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3,3',5,5'-tetramethyl-1,1'-biadamantane | 58156-57-3

中文名称
——
中文别名
——
英文名称
3,3',5,5'-tetramethyl-1,1'-biadamantane
英文别名
1-(3,5-dimethyl-1-adamantyl)-3,5-dimethyladamantane
3,3',5,5'-tetramethyl-1,1'-biadamantane化学式
CAS
58156-57-3
化学式
C24H38
mdl
——
分子量
326.566
InChiKey
FIPUGAQNGMJSCJ-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    8.7
  • 重原子数:
    24
  • 可旋转键数:
    1
  • 环数:
    8.0
  • sp3杂化的碳原子比例:
    1.0
  • 拓扑面积:
    0
  • 氢给体数:
    0
  • 氢受体数:
    0

上下游信息

  • 下游产品
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

  • 作为反应物:
    参考文献:
    名称:
    取代金刚烷的阳极氧化
    摘要:
    报告了一系列1-烷基金刚烷的光电子能谱和伏安数据。在三氟乙酸或乙腈中对scsc进行阳极氧化,得到电荷离域的阳离子自由基。而金刚烷,1-乙基金刚烷。1-甲基金刚烷和1-异丙基金刚烷通过质子损失而从阳离子基团产生产物,其他更高度取代的衍生物为例如。1-叔丁基金刚烷。通过碳-碳键的断裂优先提供产品。去质子化和碎片化之间的竞争由离开的碳正离子的稳定性控制。仅在第三级群体离开时才是碎片占主导地位。
    DOI:
    10.1039/p29770000505
  • 作为产物:
    描述:
    1-溴-3,5-二甲基金刚烷 在 silver(I) bromide 、 magnesium 作用下, 以 乙醚 为溶剂, 生成 3,3',5,5'-tetramethyl-1,1'-biadamantane
    参考文献:
    名称:
    取代金刚烷的阳极氧化
    摘要:
    报告了一系列1-烷基金刚烷的光电子能谱和伏安数据。在三氟乙酸或乙腈中对scsc进行阳极氧化,得到电荷离域的阳离子自由基。而金刚烷,1-乙基金刚烷。1-甲基金刚烷和1-异丙基金刚烷通过质子损失而从阳离子基团产生产物,其他更高度取代的衍生物为例如。1-叔丁基金刚烷。通过碳-碳键的断裂优先提供产品。去质子化和碎片化之间的竞争由离开的碳正离子的稳定性控制。仅在第三级群体离开时才是碎片占主导地位。
    DOI:
    10.1039/p29770000505
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文献信息

  • Film forming composition, insulating film formed by use of the composition, and electronic device
    申请人:Watanabe Yasufumi
    公开号:US20070255003A1
    公开(公告)日:2007-11-01
    A film forming composition includes a polymer of a compound represented by formula (I): wherein R 1 , R 2 and R 3 each independently represents a substituent containing a carbon-carbon double bond or carbon-carbon triple bond; X 1 , X 2 and X 3 each independently represents any substituent; l and n each stands for an integer of from 0 to 15 and m stands for an integer of from 0 to 14, with the proviso that l, m and n do not represent 0 simultaneously; o and q each independently stands for an integer of from 0 to 15 and p independently stands for an integer of from 0 to 14; and r stands for 0 or 1, with the proviso that when r=0, R 1 and R 3 each independently represents a substituent containing a carbon-carbon double bond.
    一种膜形成组合物包括化合物的聚合物,该化合物由式(I)表示:其中R1,R2和R3各自独立地表示含有碳-碳双键或碳-碳三键的取代基;X1,X2和X3各自独立地表示任何取代基;l和n分别表示从0到15的整数,m表示从0到14的整数,但是具有l,m和n不能同时表示0的限定条件;o和q各自独立地表示从0到15的整数,p独立地表示从0到14的整数;r表示0或1,但是具有当r=0时,R1和R3各自独立地表示含有碳-碳双键的取代基的限定条件。
  • Benzoxazole Resin Precursor, Polybenzoxazole Resin, Resin Film And Semiconductor Device
    申请人:Enoki Takashi
    公开号:US20080206548A1
    公开(公告)日:2008-08-28
    A benzoxazole resin precursor comprising a first repeating unit which is obtained by the reaction of a bisaminophenol compound and a dicarboxylic acid compound, at least one of which has the diamondoid structure; a benzoxazole resin precursor further comprising a second repeating unit which is obtained by the reaction of a bisaminophenol compound having no diamondoid structure and a dicarboxylic acid compound having no diamondoid structure; a polybenzoxazole resin obtained by the ring-closing reaction with dehydration of the above benzoxazole resin precursor; a resin film constituted with the benzoxazole resin precursor or the polybenzoxazole resin. A polybenzoxazole resin and a resin film having excellent heat resistance and a small permittivity and a semiconductor device using the resin film can be obtained from the benzoxazole resin precursor.
    一种苯并噁唑树脂前体,包括第一重复单元,该单元由双氨基酚化合物和二羧酸化合物反应得到,其中至少一个具有金刚烷结构;一种苯并噁唑树脂前体,进一步包括第二重复单元,该单元由不具有金刚烷结构的双氨基酚化合物和不具有金刚烷结构的二羧酸化合物反应得到;通过上述苯并噁唑树脂前体的环合反应和脱水反应得到的聚苯并噁唑树脂;由苯并噁唑树脂前体或聚苯并噁唑树脂构成的树脂膜。可以从苯并噁唑树脂前体中获得具有优异耐热性和小介电常数的聚苯并噁唑树脂和树脂膜,以及使用树脂膜的半导体器件。
  • POLYMER FOR FORMING INSULATING FILM, COMPOSITION FOR FORMING INSULATING FILM, INSULATING FILM, AND ELECTRONIC DEVICE HAVING SAME
    申请人:SANO Yohko
    公开号:US20100130672A1
    公开(公告)日:2010-05-27
    A polymer and composition useful in forming an insulating film provided with a low permittivity, a high heat resistance, and a high mechanical strength and an insulating film obtained from these and an electronic device having the same are provided. The polymer for forming an insulating film according to the present invention is characterized by being obtained by polymerizing a reactive compound represented by Formula (1). The insulating film according to the present invention is formed using a composition for forming an insulating film including that polymer, has molecular spaces having an average space size of 0.7 nm to 5 nm, and has a permittivity of 2.3 or less. The electronic device according to the present invention has the insulating film. (wherein R 1 , R 2 , and R 3 are the same or different from each other and respectively represent an organic group having a ring structure; X and Y are the same or different from each other and respectively represent an aromatic organic group having a reactive group; and n represents 0 or 1).
    本发明提供了一种聚合物和组合物,用于形成具有低介电常数、高耐热性和高机械强度的绝缘膜,以及由此获得的绝缘膜和具有相同绝缘膜的电子设备。根据本发明,用于形成绝缘膜的聚合物的特点在于通过聚合由式(1)表示的反应性化合物获得。根据本发明,使用包括该聚合物的形成绝缘膜的组合物形成绝缘膜,具有平均空间尺寸为0.7nm至5nm的分子空间,并具有介电常数小于2.3。根据本发明的电子设备具有该绝缘膜。(其中,R1、R2和R3彼此相同或不同,分别表示具有环状结构的有机基团;X和Y彼此相同或不同,分别表示具有反应性基团的芳香有机基团;n表示0或1)。
  • Benzoxazole resin precursor, polybenzoxazole resin, resin film and semiconductor device
    申请人:Sumitomo Bakelite Co., Ltd.
    公开号:US08337982B2
    公开(公告)日:2012-12-25
    A benzoxazole resin precursor comprising a first repeating unit which is obtained by the reaction of a bisaminophenol compound and a dicarboxylic acid compound, at least one of which has the diamondoid structure; a benzoxazole resin precursor further comprising a second repeating unit which is obtained by the reaction of a bisaminophenol compound having no diamondoid structure and a dicarboxylic acid compound having no diamondoid structure; a polybenzoxazole resin obtained by the ring-closing reaction with dehydration of the above benzoxazole resin precursor; a resin film constituted with the benzoxazole resin precursor or the polybenzoxazole resin. A polybenzoxazole resin and a resin film having excellent heat resistance and a small permittivity and a semiconductor device using the resin film can be obtained from the benzoxazole resin precursor.
    一种苯并噁唑树脂前体,包括第一重复单元,该重复单元由双氨基酚化合物和二羧酸化合物反应得到,其中至少一个具有金刚烷结构;一种苯并噁唑树脂前体,进一步包括第二重复单元,该重复单元由无金刚烷结构的双氨基酚化合物和无金刚烷结构的二羧酸化合物反应得到;通过上述苯并噁唑树脂前体的环合反应和脱水反应得到的聚苯并噁唑树脂;由苯并噁唑树脂前体或聚苯并噁唑树脂构成的树脂薄膜。可以从苯并噁唑树脂前体中获得具有优异耐热性和小介电常数的聚苯并噁唑树脂和树脂薄膜,以及使用该树脂薄膜的半导体器件。
  • Polymer for forming insulating film, composition for forming insulating film, insulating film, and electronic device having same
    申请人:Sano Yohko
    公开号:US08530596B2
    公开(公告)日:2013-09-10
    A polymer and composition useful in forming an insulating film provided with a low permittivity, a high heat resistance, and a high mechanical strength and an insulating film obtained from these and an electronic device having the same are provided. The polymer for forming an insulating film according to the present invention is characterized by being obtained by polymerizing a reactive compound represented by Formula (1). The insulating film according to the present invention is formed using a composition for forming an insulating film including that polymer, has molecular spaces having an average space size of 0.7 nm to 5 nm, and has a permittivity of 2.3 or less. The electronic device according to the present invention has the insulating film. (wherein R1, R2, and R3 are the same or different from each other and respectively represent an organic group having a ring structure; X and Y are the same or different from each other and respectively represent an aromatic organic group having a reactive group; and n represents 0 or 1).
    提供了一种用于形成具有低介电常数、高耐热性和高机械强度的绝缘膜的聚合物和组合物,以及从这些聚合物和组合物获得的绝缘膜和具有相同绝缘膜的电子设备。根据本发明,用于形成绝缘膜的聚合物的特点在于通过聚合由式(1)表示的反应性化合物得到。根据本发明,使用包括该聚合物的形成绝缘膜的组合物形成绝缘膜,具有平均空间尺寸为0.7纳米至5纳米的分子空间,并且具有介电常数为2.3或更低。根据本发明的电子设备具有绝缘膜。(其中R1、R2和R3彼此相同或不同,分别表示具有环状结构的有机基团;X和Y彼此相同或不同,分别表示具有反应性基团的芳香性有机基团;n表示0或1)。
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