1,2,2-Trimethyl-propyl-diazene | 31457-80-4

• 分子结构分类: 有机化合物
• 英文名称: 1,2,2-Trimethyl-propyl-diazene
• 英文别名: 3,3-Dimethylbutan-2-yldiazene
• CAS: 31457-80-4
• 化学式: C₆H₁₄N₂
• 分子量: 114.191
• InChiKey: SAQBWVBRJKCWRJ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3
• 重原子数：
  8
• 可旋转键数：
  2
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  36.2
• 氢给体数：
  1
• 氢受体数：
  2

文献信息

• Orthogonal Procesing of Organic Materials Used in Electronic and Electrical Devices
  申请人：Ober Christopher K.

  公开号：US20110159252A1

  公开（公告）日：2011-06-30

  An orthogonal process for photolithographic patterning organic structures is disclosed. The disclosed process utilizes fluorinated solvents or supercritical CO 2 as the solvent so that the performance of the organic conductors and semiconductors would not be adversely affected by other aggressive solvent. One disclosed method may also utilize a fluorinated photoresist together with the HFE solvent, but other fluorinated solvents can be used. In one embodiment, the fluorinated photoresist is a resorcinarene, but various fluorinated polymer photoresists and fluorinated molecular glass photoresists can be used as well. For example, a copolymer perfluorodecyl methacrylate (FDMA) and 2-nitrobenzyl methacrylate (NBMA) is a suitable orthogonal fluorinated photoresist for use with fluorinated solvents and supercritical carbon dioxide in a photolithography process. The combination of the fluorinated photoresist and the fluorinated solvent provides a robust, orthogonal process that is yet to be achieved by methods or devices known in the art.

  本文介绍了一种用于光刻有机结构的正交工艺。该工艺利用氟化溶剂或超临界CO2作为溶剂，以使有机导体和半导体的性能不受其他侵蚀性溶剂的不利影响。其中一种方法还可以使用氟化光阻与HFE溶剂结合使用，但也可以使用其他氟化溶剂。在一种实施例中，氟化光阻是一种二苯并呋喃酮，但也可以使用各种氟化聚合物光阻和氟化分子玻璃光阻。例如，一种共聚物全氟癸基甲基丙烯酸酯（FDMA）和2-硝基苯甲酸甲酯（NBMA）是用于与氟化溶剂和超临界二氧化碳在光刻工艺中使用的适用于正交的氟化光阻。氟化光阻和氟化溶剂的组合提供了一种强大的正交工艺，这种工艺尚未被已知的方法或设备实现。