A series of dibenzo[de,op]bistetracene derivatives is synthesized and their single-crystal FET devices show a hole mobility from 0.045 cm2 V−1 s−1 up to 1.19 cm2 V−1 s−1, due to the effect of substituents on the crystal packing/electronic coupling.
合成了一系列二苯并[
de,
op]双四环
芴衍
生物,它们的单晶场效应晶体管器件显示出从0.045 cm
2 V
−1 s
−1到1.19 cm
2 V
−1 s
−1的空穴迁移率,这是由于取代基对晶体堆积/电子耦合的影响。