Ground-State Stereoelectronic Effects Involving Silicon and Germanium: A Comparison of the Effects of Germanium and Silicon Substituents on C−O Bond Lengths at the β-Position
摘要:
Results of low-temperature crystal structures for beta-(trimethylgermyl)-substituted cyclohexyl esters and beta-(trimethylsilyl)-substituted cyclohexyl esters are reported. These reveal that the trimethylgermyl substituent causes significant lengthening of ester C-O bond lengths at the beta position when compared to the corresponding unsubstituted cyclohexyl esters. Comparison of trimethylgermyl and trimethylsilyl ester C-O bond lengths suggests that the ground state effects of these two substituents are similar.