4-苯基乙炔基邻苯二甲酸 | 219537-88-9

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 中文名称: 4-苯基乙炔基邻苯二甲酸
• 英文名称: 4-phenylethynylphthalic acid
• 英文别名: 4-(2-phenylethynyl)phthalic Acid
• CAS: 219537-88-9
• 化学式: C₁₆H₁₀O₄
• 分子量: 266.253
• InChiKey: JPVBXQAUQXVQGJ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3
• 重原子数：
  20
• 可旋转键数：
  4
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  74.6
• 氢给体数：
  2
• 氢受体数：
  4

反应信息

• 作为反应物：
  描述：

  4-苯基乙炔基邻苯二甲酸 在 乙酸酐 作用下， 反应 0.05h， 以99%的产率得到4-苯基乙炔基邻苯二甲酸酐
  参考文献：
  名称：

  Microwave Accelerated Synthesis of 4-Phenylethynylphthalic Anhydride

  摘要：

  Sn-β沸石（插入锡原子的硅沸石β）是一种具有独特性能的新型催化材料，在石油化工、精细化工和制糖工业中大显身手。本文简要介绍了新型异质分子筛的奇异性来源和合成方法。此外，我们还提出了在葡萄糖转化中的工业应用前景。

  DOI：

  10.14233/ajchem.2015.17440
• 作为产物：
  描述：

  4-苯基乙炔基邻苯二甲酸二甲酯 在 甲醇 、 sodium hydroxide 、 水 、 盐酸 作用下， 以 甲醇 、 水 为溶剂， 反应 3.5h， 生成 4-苯基乙炔基邻苯二甲酸
  参考文献：
  名称：

  Aryl ethynyl phthalic acid derivative and method for producing the same

  摘要：

  本发明提供了由式1、3、5、4A和5A所代表的芳基乙炔基邻苯二甲酸及其衍生物(包括含氟化合物)，其中包括式2的结构，以及制备这些化合物的方法，其中通过将芳基邻苯二甲酸经环闭合反应形成芳基乙炔基邻苯二甲酸酐。

  公开号：

  US20050215820A1

文献信息

• A facile and efficient synthetic method for 4-phenylethynylphthalic anhydride
  作者：Di Feng Wu、Mei Jia Yang、Yang Wang、Guo Wei Gao、Jian Men

  DOI：10.1016/j.cclet.2010.10.002

  日期：2011.2

  between phenylacetylene and 4-bromophthalic acid which was for the first time employed as start material, followed by dehydration of 4-phenylethynylphthalic acid. Compared with traditional synthetic routes, this method provides several advantages such as readily available raw materials, convenient manipulation and high yield. The products were characterized by IR, 1H NMR, 13C NMR, MS and elemental analysis

  已经描述了合成4-苯基乙炔基邻苯二甲酸酐的新方法。通过Pd / Cu催化的苯乙炔与4-溴邻苯二甲酸之间的Sonogashira偶联反应合成目标化合物，该反应首次用作起始原料，然后将4-苯基乙炔基邻苯二甲酸脱水。与传统的合成路线相比，该方法具有许多优点，例如原料易得，操作方便和高收率。产物分别通过IR，1 H NMR，13 C NMR，MS和元素分析进行表征。
• Synthesis of 4-Phenylethynylphthalic Anhydride, a useful End-Capping Agent for Polyimides
  作者：Mei-Jia Yang、Tao Shao、Jian Men、Guo-wei Gao、Hua Chen

  DOI：10.3184/174751912x13366326240908

  日期：2012.6

  Hydrolysis and bromination of phthalic anhydride in water gave a mixture of the monosodium salt of 4-bromo-phthalic acid. These were reacted with phenylacetylene under Sonogashira coupling reaction conditions in an aqueous medium. Acidification afforded 4-phenylethynylphthalic acid and then dehydration of this gave 4-phenylethynylphthalic anhydride in 76% overall yield. Compared with traditional synthetic methods, this method has the advantage of low cost, convenient manipulation and is environmentally friendly.

  邻苯二甲酸酐在水中水解和溴化，得到 4-溴邻苯二甲酸单钠盐的混合物。在水介质中，在 Sonogashira 偶联反应条件下，这些物质与苯乙炔发生反应。酸化后得到 4-苯乙炔基邻苯二甲酸，脱水后得到 4-苯乙炔基邻苯二甲酸酐，总收率为 76%。与传统的合成方法相比，该方法具有成本低、操作方便、环保等优点。
• Precursor of a heat resistant resin, heat resistant resin, insulating film and semiconductor device
  申请人：——

  公开号：US20020013443A1

  公开（公告）日：2002-01-31

  A precursor of a polybenzoxazole resin which comprises a crosslinking group in a molecule and has a specific structure, a polybenzoxazole resin obtained from the precursor by the condensation reaction and the crosslinking reaction, an insulating film comprising the polybenzoxazole resin and a semiconductor device comprising an insulating interlayer film in multi-layer wiring or a film for protecting surfaces which comprises the above insulating film. The precursor exhibits excellent processability due to excellent solubility in solvents and, after the ring closure, excellent heat stability in applications. The resin exhibits excellent electric, physical and mechanical properties and is advantageously used for insulating interlayer films of semiconductor devices and the like applications.

  一种聚苯并咪唑树脂的前体，其分子中包含交联基团并具有特定的结构，通过缩合反应和交联反应获得的聚苯并咪唑树脂，包括聚苯并咪唑树脂的绝缘膜以及包括上述绝缘膜的多层布线中的绝缘中间层膜或用于保护表面的膜的半导体器件。由于前体在溶剂中具有优异的溶解性，因此表现出优异的加工性能，并且在环闭后具有优异的热稳定性能，树脂表现出优异的电学、物理和机械性能，可优点地用于半导体器件的绝缘中间层膜等应用。
• Material for an insulating film, coating varnish for an insulating film, and insulating film and semiconductor device using the same
  申请人：——

  公开号：US20040002572A1

  公开（公告）日：2004-01-01

  A material for an insulating film which comprises a copolymer obtained by reacting a polyamide having a specific structure and a reactive oligomer as a component forming the film; a coating varnish for an insulating film which comprises this material and an organic solvent; an insulating film which comprises a layer of a resin comprising as a main structure a polybenzoxazole which is obtained by treating the above material or the above coating varnish by heating so that condensation reaction and crosslinking reaction take place and has fine pores; and a semiconductor device which comprises an insulating interlayer film for multi-layer wiring comprising the insulating film and/or a surface protective film comprising the insulating film. Excellent electrical, thermal and mechanical properties are exhibited and a low permittivity can be achieved.

  一种绝缘薄膜材料，包括由特定结构的聚酰胺和反应性低聚物作为成膜组分所反应得到的共聚物；一种用于绝缘薄膜的涂覆清漆，包括该材料和有机溶剂；一种绝缘薄膜，包括一层树脂，其主要结构为通过热处理上述材料或上述涂覆清漆得到的聚苯并咪唑，发生缩聚反应和交联反应并具有细小孔隙；以及一种半导体器件，包括用于多层布线的绝缘中间层膜，包括上述绝缘薄膜和/或表面保护膜，包括上述绝缘薄膜。具有优异的电性能、热性能和机械性能，并且可以实现低介电常数。
• Benzoxazole Resin Precursor, Polybenzoxazole Resin, Resin Film And Semiconductor Device
  申请人：Enoki Takashi

  公开号：US20080206548A1

  公开（公告）日：2008-08-28

  A benzoxazole resin precursor comprising a first repeating unit which is obtained by the reaction of a bisaminophenol compound and a dicarboxylic acid compound, at least one of which has the diamondoid structure; a benzoxazole resin precursor further comprising a second repeating unit which is obtained by the reaction of a bisaminophenol compound having no diamondoid structure and a dicarboxylic acid compound having no diamondoid structure; a polybenzoxazole resin obtained by the ring-closing reaction with dehydration of the above benzoxazole resin precursor; a resin film constituted with the benzoxazole resin precursor or the polybenzoxazole resin. A polybenzoxazole resin and a resin film having excellent heat resistance and a small permittivity and a semiconductor device using the resin film can be obtained from the benzoxazole resin precursor.

  一种苯并噁唑树脂前体，包括第一重复单元，该单元由双氨基酚化合物和二羧酸化合物反应得到，其中至少一个具有金刚烷结构；一种苯并噁唑树脂前体，进一步包括第二重复单元，该单元由不具有金刚烷结构的双氨基酚化合物和不具有金刚烷结构的二羧酸化合物反应得到；通过上述苯并噁唑树脂前体的环合反应和脱水反应得到的聚苯并噁唑树脂；由苯并噁唑树脂前体或聚苯并噁唑树脂构成的树脂膜。可以从苯并噁唑树脂前体中获得具有优异耐热性和小介电常数的聚苯并噁唑树脂和树脂膜，以及使用树脂膜的半导体器件。