作者:James Y. Becker
DOI:10.1016/s0022-328x(00)84192-3
日期:1977.2
Alkylphenylacetylenes, C6H5CCCH2R, have been metallated at the propargylic positions with an excess of n-butyllithium in diethyl ether at 0°C. Mono- and di-silyl derivatives have been isolated by quenching the metallation mixtures with Me3SiCl at different times. Pseudo-first order rate constants have been calculated for the monometallation from the rate of formation of the silylated products. A Taft
Alkylphenylacetylenes,C 6 H ^ 5 CCCH 2 R,已经被用在二乙醚中的过量的正丁基锂的炔位置金属化在0℃。通过在不同时间用Me 3 SiCl淬灭金属化混合物可以分离出单甲硅烷基和二甲硅烷基衍生物。已经从甲硅烷基化产物的形成速率计算了单金属化的伪一级反应速率常数。塔夫脱相关性给出ρ *= 1.8。