The present invention provides a resist underlayer film capable of improving LWR and CDU in a fine pattern formed by a chemically-amplified resist which uses an acid as a catalyst. A composition for forming a silicon-containing resist underlayer film, including a thermosetting silicon-containing material (Sx), a curing catalyst (Xc), and a solvent, in which a distance of diffusion of the curing catalyst (Xc) from a resist underlayer film formed from the composition for forming a silicon-containing resist underlayer film to a resist upper layer film to be formed on the resist underlayer film is 5 nm or less.
本发明提供了一种抗蚀剂底层薄膜,它能够提高由
化学放大抗蚀剂形成的精细图案的 LWR 和 CDU,该抗蚀剂使用酸作为催化剂。一种用于形成含
硅光刻胶下层膜的组合物,包括热固性含
硅材料 (Sx)、固化催化剂 (Xc) 和溶剂,其中固化催化剂 (Xc) 从由该用于形成含
硅光刻胶下层膜的组合物形成的光刻胶下层膜扩散到将在该光刻胶下层膜上形成的光刻胶上层膜的距离为 5 nm 或以下。