L-lysine picrate | 2497-08-7

• 分子结构分类: 有机化合物 - 苯类化合物 - 酚类
• 英文名称: L-lysine picrate
• 英文别名: L-lysinium picrate；L-Lysin; Picrat；L-Lysin; Monopicrat；L-Lysine--2,4,6-trinitrophenol (1/1)；(2S)-2,6-diaminohexanoic acid;2,4,6-trinitrophenol
• CAS: 2497-08-7
• 化学式: C₆H₃N₃O₇*C₆H₁₄N₂O₂
• 分子量: 375.295
• InChiKey: MMUSXJGCZDZDIP-ZSCHJXSPSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.64
• 重原子数：
  26
• 可旋转键数：
  5
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.42
• 拓扑面积：
  247
• 氢给体数：
  4
• 氢受体数：
  11

反应信息

• 作为产物：
  描述：

  L-赖氨酸 、 苦味酸 以 水 、 丙酮 为溶剂， 生成 L-lysine picrate
  参考文献：
  名称：

  有机 NLO 化合物的生长和结构分析：l-苦味酸赖氨酸

  摘要：

  摘要 l-苦味酸赖氨酸（LLP）是一种有机材料，采用溶液生长法合成和生长。通过单晶X射线衍射分析解决了生长材料的晶体结构，发现该材料属于三斜晶系，空间群为P 1。晶体的透射范围在470-1100 nm范围内测量使用 UV-vis-NIR 吸收光谱在 470 nm 处具有较低的截止波长。发现生长材料的光学带隙确定材料的介电行为。材料中存在的主要官能团使用 FTIR 光谱分析进行鉴定。通过 TGA 和 DTA 分析研究了热稳定性和分解范围。使用SEM分析研究生长晶体的微观结构。通过 1 H 和 13 C NMR 光谱研究质子和碳的各种化学环境以确认生长晶体的分子结构。NLO 行为由 Kurtz 和 Perry 技术证实，SHG 效率估计为标准 KDP 的 1.4 倍。

  DOI：

  10.1016/j.molstruc.2016.07.030

文献信息

• CHEMICAL MECHANICAL POLISHING AND WAFER CLEANING COMPOSITION COMPRISING AMIDOXIME COMPOUNDS AND ASSOCIATED METHOD FOR USE
  申请人：Lee Wai Mun

  公开号：US20090130849A1

  公开（公告）日：2009-05-21

  A composition and associated method for chemical mechanical planarization (or other polishing) is described. The composition contains an amidoxime compound and water. The composition may also contain an abrasive and a compound with oxidation and reduction potential. The composition is useful for attaining improved removal rates for metal, including copper, barrier material, and dielectric layer materials in metal CMP. The composition is particularly useful in conjunction with the associated method for metal CMP applications.

  本文描述了一种化学机械平整化（或其他抛光）的组合物及其相关方法。该组合物含有一种酰胺肟化合物和水。该组合物还可以含有磨料和具有氧化还原潜力的化合物。该组合物可用于在金属CMP中获得改进的金属去除速率，包括铜、屏障材料和金属CMP中的介电层材料。该组合物在金属CMP应用的相关方法中特别有用。
• COPPER CMP POLISHING PAD CLEANING COMPOSITION COMPRISING OF AMIDOXIME COMPOUNDS
  申请人：Lee Wai Mun

  公开号：US20090137191A1

  公开（公告）日：2009-05-28

  The present invention relates to methods of using amidoxime compositions for cleaning polishing pads, particularly after chemical mechanical planarization or polishing is provided. A polishing pad is cleaned of Cu CMP by-products, subsequent to or during planarizing a wafer, to reduce pad-glazing by applying to the polishing pad surface a composition comprising an aqueous amidoxime compound solution in water.

  本发明涉及使用氨基甲酰肼组合物清洁抛光垫的方法，特别是在化学机械平面化或抛光后提供的方法。在平面化晶片的过程中或之后，通过在抛光垫表面涂布含有水的氨基甲酰肼化合物溶液的组合物，清除铜化学机械抛光副产物，以减少垫面光泽。
• Process for forming a metal interconnect
  申请人：——

  公开号：US20010006841A1

  公开（公告）日：2001-07-05

  This invention relates to a process for forming a metal interconnect comprising the steps of forming a concave in an insulating film formed on a substrate, forming a barrier metal film on the insulating film, forming an interconnect metal film over the whole surface such that the concave is filled with the metal and then polishing the surface of the substrate by chemical mechanical polishing, characterized in that the polishing step comprises a first polishing step of polishing the surface such that the interconnect metal film partially remains on the surface other than the concave and a second polishing step of polishing the surface using a polishing slurry controlling a polishing-rate ratio of the interconnect metal to the barrier metal to 1 to 3 both inclusive, until the surface of the insulating film other than the concave is substantially completely exposed. According to this invention, dishing and erosion can be prevented and a reliable damascene interconnect with a small dispersion of an interconnect resistance can be formed.

  本发明涉及一种形成金属互连器件的工艺，包括以下步骤：在基板上形成的绝缘膜上形成凹面，在绝缘膜上形成阻挡金属膜，在整个表面上形成互连金属膜，使凹面充满金属，然后通过化学机械抛光对基板表面进行抛光、其特征在于，抛光步骤包括：第一抛光步骤，抛光表面，使互连金属膜部分留在凹面以外的表面上；第二抛光步骤，使用抛光浆料抛光表面，控制互连金属与阻挡金属的抛光速率比为 1 至 3（包括 1 和 3），直到凹面以外的绝缘膜表面基本上完全暴露出来。根据本发明，可以防止分层和侵蚀，并形成可靠的大马士革互连，互连电阻的分散程度很小。
• Slurry for chemical mechanical polishing
  申请人：——

  公开号：US20010018270A1

  公开（公告）日：2001-08-30

  The present invention relates to a slurry used for chemical mechanical polishing of a substrate having an insulating film and a tantalum-containing metal film formed on the insulting film, which slurry contains a silica abrasive and a polycarboxylic acid such as oxalic acid, malonic acid, tartaric acid, malic acid, glutaric acid, citric acid, maleic acid or the like. According to the present invention, a buried electric connection of high reliability and excellent electrical properties can be formed at a high polishing rate, i.e. at a high throughput with the generation of dishing and erosion being suppressed.

  本发明涉及一种浆料，用于对具有绝缘膜和形成在侮辱膜上的含钽金属膜的基板进行化学机械抛光，该浆料含有硅磨料和聚羧酸，如草酸、丙二酸、酒石酸、苹果酸、戊二酸、柠檬酸、马来酸或类似物质。根据本发明，可以在高抛光率（即高产量）下形成具有高可靠性和优异电气性能的埋入式电连接，同时还能抑制碟形磨损和侵蚀的产生。
• Chemical mechanical polishing slurry
  申请人：NEC Corporation

  公开号：US20020093002A1

  公开（公告）日：2002-07-18

  This invention provides a chemical mechanical polishing slurry for polishing a copper-based metal film formed on an insulating film comprising a concave on a substrate, comprising a polishing material, an oxidizing agent and water as well as a benzotriazole compound and a triazole compound. The polishing slurry may be used in CMP to form a reliable damascene electric connection with excellent electric properties at a higher polishing rate, i.e., a higher throughput while preventing dishing.

  本发明提供了一种化学机械抛光浆料，用于抛光在基底上由凹面构成的绝缘膜上形成的铜基金属膜，该浆料由抛光材料、氧化剂和水以及苯并三唑化合物和三唑化合物组成。抛光浆料可用于 CMP，以更高的抛光速率（即更高的产量）形成可靠的大马士革电连接，并具有优异的电气性能，同时还能防止剥离。