PHOTOACID GENERATOR, AND RESIN COMPOSITION FOR PHOTOLITHOGRAPHY
申请人:SAN-APRO LTD.
公开号:US20160368879A1
公开(公告)日:2016-12-22
Provided is a non-ionic photoacid generator (A) expressed by general formula (1). R1 and R2 each independently represents an alkyl group having 1-18 carbons or a fluoroalkyl group having 1-18 carbons, an alkenyl group having 2-18 carbons, an alkynyl group having 2-18 carbons, an aryl group having 6-18 carbons, a silyl group, or the like; m and n respectively represent the number of R1s and R2s, each number being an integer from 0 to 3, and the total number (m+n) of R1s and R2s being an integer from 1 to 6. The m number of R1s and the n number of R2s may each be the same or different. R3 represents a hydrocarbon having 1-18 carbons wherein one part or all of the hydrogen may be substituted by fluorine.
SULFONATE COMPOUND, PHOTOACID GENERATOR, AND RESIN COMPOSITION FOR PHOTOLITHOGRAPHY
申请人:SAN-APRO LIMITED
公开号:US20170233336A1
公开(公告)日:2017-08-17
Provided are: a non-ionic photoacid generator containing a sulfonate compound having a high photosensitivity to i lines, exhibiting excellent heat-resistance stability, and exhibiting excellent solubility in a hydrophobic material; and a resin composition for photolithography containing the same. The present invention is a sulfonate compound characterized by being represented by general formula (1).
[In formula (1), R1 represents an aryl group having 6 to 18 carbon atoms or a heterocyclic hydrocarbon group having 4 to 20 carbon atoms. R2 represents a hydrogen atom, an alkyl group having 1 to 18 carbon atoms, an alkenyl group having 2 to 18 carbon atoms, an alkynyl group having 2 to 18 carbon atoms, or an aryl group having 6 to 18 carbon atoms. R3 represents a hydrocarbon group having 1 to 18 carbon atoms (in which some or all hydrogen atoms may be substituted with fluorine).]
CROSSLINKING AGENT, NEGATIVE RESIST COMPOSITION, AND PATTERN FORMING METHOD USING THE NEGATIVE RESIST COMPOSITION
申请人:Okuyama Kenichi
公开号:US20120115084A1
公开(公告)日:2012-05-10
Disclosed are a negative resist composition which shows excellent sensitivity and resolution in pattern formation by exposure to electron beams or EUV, a novel crosslinking agent suitable for the resist composition, and a pattern forming method using the resist composition.
The negative resist composition comprises: (A) a polyphenol compound comprising two or more phenolic hydroxyl groups in a molecule thereof and having a molecular weight of 300 to 3,000, (B) an acid generator which directly or indirectly produces acid by exposure to active energy rays having a wavelength of 248 nm or less, and (C) a crosslinking agent represented by the following chemical formula (1).
(The symbols shown in the formula (1) are defined in the Description).
Disclosed is a photosensitive resin composition comprising (A) a polyimide resin, (B) a photo-acid generator, and (C) a crosslinking agent having an alkoxyalkylated amino group.