Zero-Pressure Thermal-Radiation-Induced Dissociation of Tetraethylsilane Cation
摘要:
Zero-pressure thermal-radiation-induced dissociation (ZTRID) of tetraethylsilane cation is reported. Dissociation of weakly bound gas-phase cluster ions by the blackbody background radiation field has been shown previously to proceed at an observable rate; the present results represent the first characterization of this process for a covalently bound molecular ion. Thermal-radiation-induced dissociation of the ions was studied at the low-pressure limit in a FT-ICR mass spectromer, and cleavage of the ethyl group from silicon was observed on a time scale of seconds, with the rate being strongly temperature dependent. The activation energy for the loss of one ethyl radical from tetraethylsilane cation was derived from the slope of the Arrhenius plot in the 340-400 K temperature range to be 0.43 +/- 0.07 eV. The bond energy (0 K) was determined to be 0.70 +/- 0.07 eV using thermal dissociation theory and 0.71 +/- 0.07 eV using master-equation modeling. A bond energy of 0.78 eV was assigned at 298 K, and a heat of formation (298 K) of 131.7 kcal mol(-1) was derived for the triethylsilyl cation.
Kinetics of hydride-transfer reactions from hydrosilanes to carbenium ions. Substituent effects in silicenium ions
作者:Herbert Mayr、Nils Basso、Gisela Hagen
DOI:10.1021/ja00034a044
日期:1992.4
varying substitution to para-substituted diarylcarbenium ions have been measured in dichloromethane solution. Generally the reactions follow a second-order rate law, -d[Ar 2 CH + ]/dt=k 2 [Ar 2 CH + ] [HSiR 1 R 2 R 3 ], and k 2 is independent of the degree of ion-pairing and the nature of the counterion (exceptions are reported). The reaction rates are almost independent of solvent polarity
已经在二氯甲烷溶液中测量了氢化物从具有广泛变化的取代基的氢硅烷 HSiR 1 R 2 R 3 到对位取代的二芳基碳鎓离子的转移速率。通常反应遵循二阶速率定律,-d[Ar 2 CH + ]/dt=k 2 [Ar 2 CH + ] [HSiR 1 R 2 R 3 ],k 2 与离子的程度无关-配对和反离子的性质(报告了例外情况)。反应速率几乎与溶剂极性无关
Kinetic hydricity of silane hydrides in the gas phase
作者:Jiahui Xu、Allison E. Krajewski、Yijie Niu、G. S. M. Kiruba、Jeehiun K. Lee
DOI:10.1039/c9sc02118c
日期:——
Herein, gasphase studies of the kinetic hydricity of a series of silane hydrides are described. An understanding of hydricity is important as hydride reactions figure largely in many processes, including organic synthesis, photoelectrocatalysis, and hydrogen activation. We find that hydricity trends in the gasphase differ from those in solution, revealing the effect of solvent. Calculations and further
Zero-Pressure Thermal-Radiation-Induced Dissociation of Tetraethylsilane Cation
作者:Chuan-Yuan Lin、Robert C. Dunbar
DOI:10.1021/jp952109c
日期:1996.1.1
Zero-pressure thermal-radiation-induced dissociation (ZTRID) of tetraethylsilane cation is reported. Dissociation of weakly bound gas-phase cluster ions by the blackbody background radiation field has been shown previously to proceed at an observable rate; the present results represent the first characterization of this process for a covalently bound molecular ion. Thermal-radiation-induced dissociation of the ions was studied at the low-pressure limit in a FT-ICR mass spectromer, and cleavage of the ethyl group from silicon was observed on a time scale of seconds, with the rate being strongly temperature dependent. The activation energy for the loss of one ethyl radical from tetraethylsilane cation was derived from the slope of the Arrhenius plot in the 340-400 K temperature range to be 0.43 +/- 0.07 eV. The bond energy (0 K) was determined to be 0.70 +/- 0.07 eV using thermal dissociation theory and 0.71 +/- 0.07 eV using master-equation modeling. A bond energy of 0.78 eV was assigned at 298 K, and a heat of formation (298 K) of 131.7 kcal mol(-1) was derived for the triethylsilyl cation.