Domain structure and electrical properties of highly textured PbZr<sub><i>x</i></sub>Ti<sub>1−<i>x</i></sub>O<sub>3</sub> thin films grown on LaNiO<sub>3</sub>-electrode-buffered Si by metalorganic chemical vapor deposition
作者:C. H. Lin、B. M. Yen、H. C. Kuo、Haydn Chen、T. B. Wu、G. E. Stillman
DOI:10.1557/jmr.2000.0020
日期:2000.1
(100) textured fine-grain (lateral grain size congruent with 0.1 to 0.15 mu}m) PbZrsubx}Tisub1-x}Osub3} (PZT) (x=0 to 0.7) were grown on conductive perovskite LaNiOsub3}-buffered platinized Si substrates by metalorganic chemical vapor deposition. Domain configuration and crystalline orientation were studied using x-ray diffraction and transmission electron microscopy. The predominant domain boundaries