1,2,4-Triazolo[1,5-a]pyrimidine, 2-methyl-5,7-diphenyl-

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 二嗪类
• 英文名称: 1,2,4-Triazolo[1,5-a]pyrimidine, 2-methyl-5,7-diphenyl-
• 英文别名: 2-methyl-5,7-diphenyl-[1,2,4]triazolo[1,5-a]pyrimidine
• 化学式: C₁₈H₁₄N₄
• 分子量: 286.3
• InChiKey: AMOUXUIXXQFHJR-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.8
• 重原子数：
  22
• 可旋转键数：
  2
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.06
• 拓扑面积：
  43.1
• 氢给体数：
  0
• 氢受体数：
  3

文献信息

• POLISHING METHOD
  申请人：HITACHI CHEMICAL COMPANY, LTD.

  公开号：US20150031205A1

  公开（公告）日：2015-01-29

  Provided is a polishing method including a step of preparing a substrate having ( 1 ) silicon nitride as a stopper, and to a direction of a surface subjected to polishing from the stopper, ( 2 ) at least a portion of a wiring metal, and ( 3 ) at least a portion of an insulating material; a step of supplying a CMP slurry, and thereby polishing the ( 2 ) wiring metal and ( 3 ) insulating material on the direction of the surface subjected to polishing; and a step of stopping polishing before the ( 1 ) silicon nitride is exposed and completely removed, in which method the CMP slurry contains (A) a copolymer of (a) a monomer that is anionic and does not contain a hydrophobic substituent and (b) a monomer containing a hydrophobic substituent; (B) an abrasive grain; (C) an acid; (D) an oxidizing agent; and (E) a liquid medium, the component (B) has a zeta potential of +10 mV or more in the CMP slurry, and the copolymerization ratio (a):(b) of the component (A) is 25:75 to 75:25 as a molar ratio, with the pH being 5.0 or less. Through this method, an interlayer insulating film and a stopper can be polished at a high selectivity while metal and the interlayer insulating film are removed at high polishing rates, and thus a semiconductor device having high dimensional accuracy can be produced.

  提供了一种抛光方法，包括以下步骤：准备基板，该基板具有（1）硅氮化物作为停止层，在从停止层到抛光表面的方向上具有（2）至少一部分的布线金属和（3）至少一部分的绝缘材料；供应CMP研磨液，并在抛光表面的方向上抛光（2）布线金属和（3）绝缘材料；在（1）硅氮化物暴露并完全去除之前停止抛光。该方法中，CMP研磨液含有（A）一种共聚物，其中包括（a）一种带负电且不含疏水取代基的单体和（b）一种含有疏水取代基的单体；（B）磨料颗粒；（C）酸；（D）氧化剂；和（E）液体介质。组分（B）在CMP研磨液中具有+10 mV或更高的ζ电位，组分（A）的共聚比（a）：（b）为25：75至75：25的摩尔比，pH值为5.0或更低。通过该方法，可以在高选择性下抛光互层绝缘膜和停止层，同时以高抛光速率去除金属和互层绝缘膜，从而生产具有高尺寸精度的半导体器件。
• Polishing slurry and polishing method
  申请人：Hitachi Chemical Co., Ltd.

  公开号：EP1881524A1

  公开（公告）日：2008-01-23

  A polishing slurry comprising an oxidant, a metal oxide dissolver, a metal inhibitor and water and having a pH from 2 to 5, wherein: the metal inhibitor contains one or more types selected from the group (C-group) consisting of aromatic compounds having a triazole skeleton and one or more types selected from the group (D-group) consisting of aliphatic compounds having a triazole skeleton, compounds having a pyrimidine skeleton, compounds having an imidazole skeleton, compounds having a guanidine skeleton, compounds having a thiazole skeleton and compounds having a pyrazole skeleton.

  一种抛光浆料，由氧化剂、金属氧化物溶解剂、金属抑制剂和水组成，pH 值为 2 至 5，其中 金属抑制剂包含一种或多种选自具有三唑骨架的芳香族化合物（C 组），以及一种或多种选自具有三唑骨架的脂肪族化合物（D 组），包括具有嘧啶骨架的化合物、具有咪唑骨架的化合物、具有胍骨架的化合物、具有噻唑骨架的化合物和具有吡唑骨架的化合物。
• POLISHING LIQUID FOR CMP AND METHOD OF POLISHING
  申请人：Hitachi Chemical Company, Ltd.

  公开号：EP2020680A1

  公开（公告）日：2009-02-04

  A CMP polishing liquid being capable of using in a chemical mechanical polishing comprising of: a first chemical mechanical polishing step of polishing a conductive substance layer of a substrate having an interlayer insulation film containing convex and concave regions on a surface thereof, a barrier layer coating along the surface of the interlayer insulation film, and the conductive substance layer coating the barrier layer while filling the concave regions, and thus exposing the barrier layer in the convex regions; and a second chemical mechanical polishing step of exposing the interlayer insulation film in the convex regions by polishing the barrier layer exposed in the first chemical mechanical polishing step; characterized in that a difference (B)-(A) is 650 Å or less , wherein the (A) is a polishing amount of the interlayer insulation film in a field area when the interlayer insulation film in the field area having a width of 1,000 µm or more of the interlayer insulation film region formed on the substrate is polished to a depth of 400 Å or more; and the (B) is a polishing amount of the interlayer insulation film in a stripe-shaped patterned area having a total width of 1, 000 µm or more wherein a wiring metal region having a width of 90 µm and the interlayer insulation film region having a width of 10 µm are aligned alternately on the substrate when the interlayer insulation film in the field area having the width of 1, 000 µm or more of the interlayer insulation film region formed on the substrate is polished to a depth of 400 Å or more .

  一种可用于化学机械抛光的 CMP 抛光液，包括第一化学机械抛光步骤，对基底的导电物质层进行抛光，该基底具有夹层绝缘膜，其表面包含凸区和凹区，沿夹层绝缘膜表面涂有阻挡层，导电物质层涂覆阻挡层，同时填充凹区，从而在凸区暴露阻挡层；和第二化学机械抛光步骤，通过抛光在第一化学机械抛光步骤中暴露的阻挡层，在凸区域暴露层间绝缘膜；其特征在于，(B)-(A)之差为 650 Å 或更小、 其中，(A)是当在基板上形成的层间绝缘膜区域中宽度为 1,000 μm 或更宽的区域中的层间绝缘膜被抛光到 400 Å 或更深时，在区域区域中的层间绝缘膜的抛光量；以及 (B)是总宽度为 1,000 µm 或更宽的条纹状图案区域中的层间绝缘膜的抛光量，其中当在基板上形成的宽度为 1,000 µm 或更宽的层间绝缘膜区域的场区中的层间绝缘膜抛光至 400 Å 或更深时，宽度为 90 µm 的配线金属区域和宽度为 10 µm 的层间绝缘膜区域交替排列在基板上。
• METAL FILM POLISHING LIQUID AND POLISHING METHOD
  申请人：Hitachi Chemical Co., Ltd.

  公开号：EP2169710A1

  公开（公告）日：2010-03-31

  The invention relates to a polishing liquid for metal film comprising 7.0% by weight or more of an oxidizer for metal, a water-soluble polymer, an oxidized metal dissolving agent, a metal anticorrosive agent and water, provided that the total amount of the polishing liquid for metal film is 100% by weight, wherein the water-soluble polymer has a weight average molecular weight of 150,000 or more and is at least one member selected from among a polycarboxylic acid, a salt of a polycarboxylic acid, and a polycarboxylic acid ester. According to the invention, provided is a polishing liquid for metal film, by which polishing can be performed at a high rate even under a polishing pressure as low as 1 psi or lower, and such that a polished film after polishing is excellent in planarity, furthermore, with which a high polishing rate can be obtained even in an initial stage of polishing, and provided is a polishing method using the polishing liquid.

  本发明涉及一种金属膜抛光液，它由 7.0%（按重量计）或更多的金属氧化剂、水溶性聚合物、氧化金属溶解剂、金属防腐剂和水组成，条件是金属膜抛光液的总量按重量计为 100%、 其中，水溶性聚合物的重量平均分子量为 150,000 或以上，并且至少是选自聚羧酸、聚羧酸盐和聚羧酸酯中的一种。根据本发明，提供了一种用于金属膜的抛光液，通过该抛光液，即使在低至 1 psi 或更低的抛光压力下也能以高抛光率进行抛光，并且抛光后的抛光膜平面度极佳，此外，通过该抛光液，即使在抛光的初始阶段也能获得高抛光率，还提供了一种使用该抛光液的抛光方法。
• POLISHING SOLUTION FOR METAL FILMS AND POLISHING METHOD USING THE SAME
  申请人：Hitachi Chemical Company, Ltd.

  公开号：EP2273537A1

  公开（公告）日：2011-01-12

  A polishing solution for metal films that comprises an oxidizing agent, a metal oxide solubilizer, a metal corrosion preventing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a copolymer of acrylic acid and methacrylic acid, the copolymerization ratio of methacrylic acid in the copolymer being 1-20 mol% based on the total of acrylic acid and methacrylic acid.

  一种金属膜抛光液，由氧化剂、金属氧化物增溶剂、金属防锈剂、水溶性聚合物和水组成，其中水溶性聚合物是丙烯酸和甲基丙烯酸的共聚物，共聚物中甲基丙烯酸的共聚比例为丙烯酸和甲基丙烯酸总量的 1-20 摩尔%。