2-(2,4-dichlorophenyl)-1,3-dimethyl-2,3-dihydro-1H-benzimidazole

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 苯并咪唑类
• 英文名称: 2-(2,4-dichlorophenyl)-1,3-dimethyl-2,3-dihydro-1H-benzimidazole
• 英文别名: 2-(2,4-dichlorophenyl)-1,3-dimethyl-2H-benzimidazole
• 化学式: C₁₅H₁₄Cl₂N₂
• mdl: MFCD00186907
• 分子量: 293.2
• InChiKey: NFLPTNAGQWPKFX-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4.8
• 重原子数：
  19
• 可旋转键数：
  1
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.2
• 拓扑面积：
  6.5
• 氢给体数：
  0
• 氢受体数：
  2

文献信息

• n-Type Doped Organic Materials and Methods Therefor
  申请人：Wei Peng

  公开号：US20110240980A1

  公开（公告）日：2011-10-06

  In accordance with various embodiments, an organic electronic device includes an n-type dopant material including an imidazole-based material having a hydrogen-based material bonded between nitrogen atoms. The n-type dopant material n-dopes an organic material, and can be used to mitigate degradation in mobility due to conditions such as exposure to ambient atmosphere, which can effect an undesirable reduction in charge transport. Other embodiments are directed to carbon nanotubes or graphene structures with this type of n-type dopant, wherein the Fermi level for the carbon nanotubes or graphene structures is below −2.5 eV to effect such n-type doping.
• US9133130B2
  申请人：——

  公开号：US9133130B2

  公开（公告）日：2015-09-15
• [EN] N-TYPE DOPED ORGANIC MATERIALS AND METHODS THEREFOR<br/>[FR] MATÉRIAUX ORGANIQUES À DOPAGE DE TYPE N ET PROCÉDÉS CORRESPONDANTS
  申请人：UNIV LELAND STANFORD JUNIOR

  公开号：WO2011127075A1

  公开（公告）日：2011-10-13

  In accordance with various embodiments, an organic electronic device includes an n-type dopant material including an imidazole-based material having a hydrogen-based material bonded between nitrogen atoms. The n-type dopant material n-dopes an organic material, and can be used to mitigate degradation in mobility due to conditions such as exposure to ambient atmosphere, which can effect an undesirable reduction in charge transport. Other embodiments are directed to carbon nanotubes or graphene structures with this type of n-type dopant, wherein the Fermi level for the carbon nanotubes or graphene structures is below -2.5 eV to effect such n-type doping.