作者:Amit Dahiya、Markus D. Schoetz、Franziska Schoenebeck
DOI:10.1002/anie.202310380
日期:2023.10.23
The site- and E-selective coupling of aryl germanes with alkenes over (pseudo)halogens (C−I, C−Br, C−Cl, C−F, C−OTf, C−OSO2F), silanes and boronic acid derivatives is reported. This unprecedented [Ge]-based oxidative Heck coupling proceeds at room temperature with high speed and under air-tolerant and base-free conditions.
芳基锗烷与烯烃在(准)卤素(C−I、C−Br、C−Cl、C−F、C−OTf、C−OSO 2 F)、硅烷和硼酸上的位点和电子选择性偶联衍生品已被报道。这种前所未有的基于[Ge]的氧化Heck偶联在室温下、在耐空气和无碱条件下高速进行。