6-(5-((6-((5-hexylthiophen-2-yl)ethynyl)-9,10-bis(phenylethynyl)-anthracen-2-yl)ethynyl) thiophen-2-yl)hexyl 3-(triethoxysilyl)-propylcarbamate | 1388814-81-0

• 分子结构分类: 有机化合物 - 苯类化合物 - 蒽
• 英文名称: 6-(5-((6-((5-hexylthiophen-2-yl)ethynyl)-9,10-bis(phenylethynyl)-anthracen-2-yl)ethynyl) thiophen-2-yl)hexyl 3-(triethoxysilyl)-propylcarbamate
• 英文别名: 6-[5-[2-[6-[2-(5-hexylthiophen-2-yl)ethynyl]-9,10-bis(2-phenylethynyl)anthracen-2-yl]ethynyl]thiophen-2-yl]hexyl N-(3-triethoxysilylpropyl)carbamate
• CAS: 1388814-81-0
• 化学式: C₆₄H₆₇NO₅S₂Si
• 分子量: 1022.46
• InChiKey: CCKSUGJVSFBCMV-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  15.11
• 重原子数：
  73
• 可旋转键数：
  31
• 环数：
  7.0
• sp3杂化的碳原子比例：
  0.33
• 拓扑面积：
  123
• 氢给体数：
  1
• 氢受体数：
  7

反应信息

• 作为产物：
  描述：

  2,6-dibromo-9,10-bis(2-phenylethynyl)anthracene 在 bis-triphenylphosphine-palladium(II) chloride 、 copper(l) iodide 、 二月桂酸二丁基锡 、 三乙胺 、 二异丙胺 作用下， 以 四氢呋喃 为溶剂， 反应 15.0h， 生成 6-(5-((6-((5-hexylthiophen-2-yl)ethynyl)-9,10-bis(phenylethynyl)-anthracen-2-yl)ethynyl) thiophen-2-yl)hexyl 3-(triethoxysilyl)-propylcarbamate
  参考文献：
  名称：

  Self-Assembled Monolayers Made of 6-(5-((6-((5-hexylthiophen-2-yl)ethynyl)-9,10-bis(phenylethynyl)anthracen-2-yl)ethynyl)thiophen-2-yl)hexyl 3-(Triethoxysilyl)Propylcarbamate for Ultrathin Film Transistors

  摘要：

  A new functionalized triethoxysilane bearing an X-shaped, anthracene-based semiconducting molecule on one arm was designed and synthesized as a precursor for the preparation of a self-assembled monolayer (SAM) on a SiO2 substrate. 3-Isocyanatopropyl triethoxysilane was reacted with a monohydroxyl-terminated X-shaped, anthracene-based semiconducting molecule in the presence of tin catalyst. The 6-(5( (6- ( (5-hexylthiophen-2-yOethyny1)-9,10-bis (ph enylethyny1)anthracen-2-yOethynypthiophen-2-yOhexyl 3-(triethoxysily1)propylcarbamate (BATHT-TEOS) was found to be stable and sufficiently reactive to form organic monolayers on hydroxylated SiO2 surfaces. The structures and properties of these SAMs were investigated using X-ray photoelectron spectroscopy, UV vis absorption spectroscopy, photoluminescence (PL) spectroscopy, laser scanning confocal microscopy PL spectrometry, and spectroscopic ellipsometry. In this work, BATHT-SAM was employed as an interfacial layer on SiO2 to fabricate ultrathin film transistors (UTFTs, active layer thickness 16.09 nm). The device UTFT-I, made of 0.06 wt % S,S'-(9,10-bis(phenylethynyl)anthracene-2,6-diy1)bis(ethyne-2,1-diyObis(2hexylthiophene) (BATHT) solution on an n-octyltrichlorosilane-SAM/Si02 layer, showed no gate effect for the carrier transport behavior; however, the device UTFT-II, fabricated on BATHT-SAM/Si02, exhibited field effect mobilities of 0.04 cm2 Nr1 s (10,off 6.3 x 103 to 1.0 x 104). This can be attributed to the effect of BATHT-SAM inducing uniform coverage and ordering of BATHT molecules as an upper layer.

  DOI：

  10.1021/la3020942

文献信息

• Self-Assembled Monolayers Made of 6-(5-((6-((5-hexylthiophen-2-yl)ethynyl)-9,10-bis(phenylethynyl)anthracen-2-yl)ethynyl)thiophen-2-yl)hexyl 3-(Triethoxysilyl)Propylcarbamate for Ultrathin Film Transistors
  作者：Dong Uk Heo、Joo Bin Lee、Yoon Deok Han、Jinsoo Joo、Hosuk Lee、Hosun Lee、Dong Hoon Choi

  DOI：10.1021/la3020942

  日期：2012.7.24

  A new functionalized triethoxysilane bearing an X-shaped, anthracene-based semiconducting molecule on one arm was designed and synthesized as a precursor for the preparation of a self-assembled monolayer (SAM) on a SiO2 substrate. 3-Isocyanatopropyl triethoxysilane was reacted with a monohydroxyl-terminated X-shaped, anthracene-based semiconducting molecule in the presence of tin catalyst. The 6-(5( (6- ( (5-hexylthiophen-2-yOethyny1)-9,10-bis (ph enylethyny1)anthracen-2-yOethynypthiophen-2-yOhexyl 3-(triethoxysily1)propylcarbamate (BATHT-TEOS) was found to be stable and sufficiently reactive to form organic monolayers on hydroxylated SiO2 surfaces. The structures and properties of these SAMs were investigated using X-ray photoelectron spectroscopy, UV vis absorption spectroscopy, photoluminescence (PL) spectroscopy, laser scanning confocal microscopy PL spectrometry, and spectroscopic ellipsometry. In this work, BATHT-SAM was employed as an interfacial layer on SiO2 to fabricate ultrathin film transistors (UTFTs, active layer thickness 16.09 nm). The device UTFT-I, made of 0.06 wt % S,S'-(9,10-bis(phenylethynyl)anthracene-2,6-diy1)bis(ethyne-2,1-diyObis(2hexylthiophene) (BATHT) solution on an n-octyltrichlorosilane-SAM/Si02 layer, showed no gate effect for the carrier transport behavior; however, the device UTFT-II, fabricated on BATHT-SAM/Si02, exhibited field effect mobilities of 0.04 cm2 Nr1 s (10,off 6.3 x 103 to 1.0 x 104). This can be attributed to the effect of BATHT-SAM inducing uniform coverage and ordering of BATHT molecules as an upper layer.