5-[1-(4-Methylphenyl)tetrazol-5-yl]-2,4-diphenylpyrimidine

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 二嗪类
• 英文名称: 5-[1-(4-Methylphenyl)tetrazol-5-yl]-2,4-diphenylpyrimidine
• 化学式: C₂₄H₁₈N₆
• 分子量: 390.4
• InChiKey: GWESWBYFEHLHCA-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4.9
• 重原子数：
  30
• 可旋转键数：
  4
• 环数：
  5.0
• sp3杂化的碳原子比例：
  0.04
• 拓扑面积：
  69.4
• 氢给体数：
  0
• 氢受体数：
  5

文献信息

• Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt comprising substrates
  申请人：BASF SE

  公开号：US10899945B2

  公开（公告）日：2021-01-26

  Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and/or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer≥1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.

  一种化学机械抛光(CMP)组合物(Q)，用于对包含(i)钴和/或(ii)钴合金和(iii)Ti N和/或TaN的基体(S)进行化学机械抛光，其中所述CMP组合物(Q)包含 (E) 无机颗粒 (F) 至少一种包含氨基和酸基(Y)的有机化合物，其中所述化合物包含n个氨基和至少n+1个酸性质子，其中n为整数≥1。(G) 至少一种氧化剂，其用量为 0.2 至 2.5 wt.- %，以混合物总重量为基准。(H) 一种水介质，其中 CMP 组合物 (Q) 的 pH 值大于 6 但小于 9。
• USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT COMPRISING SUBSTRATES
  申请人：BASF SE

  公开号：EP3334794B1

  公开（公告）日：2020-02-19
• CHEMICAL MECHANICAL POLISHING COMPOSITION
  申请人：BASF SE

  公开号：EP3714012A1

  公开（公告）日：2020-09-30
• [EN] USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT COMPRISING SUBSTRATES<br/>[FR] UTILISATION D'UNE COMPOSITION DE POLISSAGE CHIMICO-MÉCANIQUE (CMP) POUR LE POLISSAGE DE SUBSTRATS COMPRENANT DU COBALT
  申请人：BASF SE

  公开号：WO2017025536A1

  公开（公告）日：2017-02-16

  Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and /or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer ≥ 1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.
• [EN] CHEMICAL MECHANICAL POLISHING COMPOSITION<br/>[FR] COMPOSITION DE POLISSAGE CHIMICO-MÉCANIQUE
  申请人：BASF SE

  公开号：WO2019101555A1

  公开（公告）日：2019-05-31

  The presently claimed subject matter is directed to a chemical mechanical polishing (CMP) com- position comprising inorganic particles, at least one organic compound comprising an amino group and/or at least one acid group (Y), potassium persulfate, at least one corrosion inhibitor and an aqueous medium for polishing substrates of the semiconductor industry comprising cobalt and/or a cobalt alloy and TiN and/or TaN.