5-tert-butyl-benzene-1,2,3-triyltriamine | 1020718-26-6

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 5-tert-butyl-benzene-1,2,3-triyltriamine
• 英文别名: 3.4.5-Triamino-1-tert.-butyl-benzol；5-tert-Butyl-benzen-1,2,3-triyltriamin；5-Tert-butylbenzene-1,2,3-triamine
• CAS: 1020718-26-6
• 化学式: C₁₀H₁₇N₃
• mdl: MFCD09264508
• 分子量: 179.265
• InChiKey: JDGJAOKLGWCUHK-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.6
• 重原子数：
  13
• 可旋转键数：
  1
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.4
• 拓扑面积：
  78.1
• 氢给体数：
  3
• 氢受体数：
  3

反应信息

• 作为反应物：
  描述：

  5-tert-butyl-benzene-1,2,3-triyltriamine 、 菲醌 在 溶剂黄146 作用下， 生成 12-tert-butyl-dibenzo[a,c]phenazin-10-ylamine
  参考文献：
  名称：

  Jedlicka, Journal fur praktische Chemie (Leipzig 1954), 1893, vol. <2>48, p. 103

  摘要：

  DOI：
• 作为产物：
  描述：

  4-(2-甲基-2-丙基)-2,6-二硝基苯胺 在 盐酸 、 tin 作用下， 生成 5-tert-butyl-benzene-1,2,3-triyltriamine
  参考文献：
  名称：

  Jedlicka, Journal fur praktische Chemie (Leipzig 1954), 1893, vol. <2>48, p. 103

  摘要：

  DOI：

文献信息

• Composition for forming a resist upper-layer film and method for producing a semiconductor device using the composition
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US10042258B2

  公开（公告）日：2018-08-07

  This composition for forming an extreme-ultraviolet (EUV) or electron-beam upper-layer resist film including (a) a polymer (P) and (b) a solvent, the solvent containing 1 to 13 mass % of a C4-12 ketone compound with respect to the entire solvent, is used in the lithography process of a procedure for manufacturing a semiconductor device. Without needing to be intermixed with a resist, and particularly on the occasion of EUV exposure, the composition for forming an EUV or electron-beam upper-layer resist film blocks undesirable exposure light, e.g., ultraviolet (UV) or deep ultraviolet (DUV) rays, and selectively transmits only the EUV rays, and can be developed using a developing solution after exposure.

  这种用于形成极紫外（EUV）或电子束上层抗蚀剂薄膜的组合物包括（a）聚合物（P）和（b）溶剂，溶剂中的C4-12酮化合物占整个溶剂的1-13质量％，用于半导体设备制造过程中的光刻工艺。这种用于形成 EUV 或电子束上层抗蚀剂薄膜的组合物无需与抗蚀剂混合，尤其是在进行 EUV 曝光时，可阻挡不希望的曝光光（例如紫外线 (UV) 或深紫外线 (DUV)），并选择性地只透射 EUV 射线，曝光后可使用显影液进行显影。
• Compositions for forming a protective film against basic aqueous hydrogen peroxide solution, and pattern formation method
  申请人：NISSAN CHEMICAL CORPORATION

  公开号：US11003078B2

  公开（公告）日：2021-05-11

  A composition for forming a protective film against basic aqueous hydrogen peroxide solution, including a crosslinker having, in one molecule, two or more groups at least one selected from the group consisting of a glycidyl group, a terminal epoxy group, an epoxycyclopentyl group, an epoxycyclohexyl group, an oxetanyl group, a vinyl ether group, an isocyanate group, and a blocked isocyanate, a compound having a group of Formula (1): (wherein X1 is a substituent reacting with the crosslinker, R0 is a direct bond or a C1-2 alkylene group, X2 is a C1-2 alkyl group, C1-2 alkoxy group, or fluoro group, a is an integer of 0-2, b is an integer of 1-3, c is an integer of 0-4, and b and c satisfy a relational expression of 1≤(b+c)≤5) on a side chain or a terminal and having a weight average molecular weight of 800 or more, and an organic solvent.

  一种用于形成针对碱性过氧化氢水溶液的保护膜的组合物，包括一种交联剂，该交联剂在一个分子中具有两个或两个以上的基团，其中至少一个基团选自缩水甘油基、末端环氧基、环氧环戊基、环氧环己基、氧杂环戊基、乙烯基醚基、异氰酸酯基和封端异氰酸酯组成的组，该化合物具有式（1）的基团： (其中 X1 是与交联剂反应的取代基，R0 是直接键或 C1-2 亚烷基，X2 是 C1-2 烷基、C1-2 烷氧基或氟基团，a 是 0-2 的整数，b 是 1-3 的整数，c 是 0-4 的整数，且 b 和 c 满足 1≤(b+c)≤5 的关系式）的侧链或末端，且其重量平均分子量大于或等于 800，以及一种有机溶剂。
• RESIST OVERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20150248057A1

  公开（公告）日：2015-09-03

  A resist overlayer film forming composition that is used for a lithography process for manufacturing semiconductor devices, and selectively transmits EUV only, in particular, by blocking exposure light undesirable for EUV exposure, such as UV and DUV, without intermixing with a resist, and that can be developed with a developing solution after exposure. A resist overlayer film forming composition including: a hydroxyl group-containing novolac-based polymer containing a structure of (Formula 1-1): (in (Formula 1-1), Ar 1 is a divalent organic group that contains 1 to 3 benzene ring(s) and optionally contains a hydroxy group; Ar 2 is a benzene ring group, a naphthalene ring group, or an anthracene ring group; each of the hydroxy group and R 1 is a substituent for a hydrogen atom on a ring of Ar 2 ); and a solvent.
• RESIST OVERLAYER FILM FORMING COMPOSITION AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE INCLUDING THE SAME
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20170010535A1

  公开（公告）日：2017-01-12

  A resist overlayer film forming composition for use in a lithography process in semiconductor device production does not intermix with a resist, blocks undesirable exposure light particularly in EUV exposure, for example, UV and DUV and selectively transmits EUV alone, and can be developed with a developer after exposure. A resist overlayer film forming composition includes: a polymer (P) including unit structures of Formula (1) and Formula (2) and having a weight average molecular weight, measured by gel permeation chromatography, of 500 to 2,000; and a C 8-16 ether compound as a solvent:
• COMPOSITION FOR FORMING A RESIST UPPER-LAYER FILM AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE USING THE COMPOSITION
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20170205711A1

  公开（公告）日：2017-07-20

  This composition for forming an extreme-ultraviolet (EUV) or electron-beam upper-layer resist film including (a) a polymer (P) and (b) a solvent, the solvent containing 1 to 13 mass % of a C4-12 ketone compound with respect to the entire solvent, is used in the lithography process of a procedure for manufacturing a semiconductor device. Without needing to be intermixed with a resist, and particularly on the occasion of EUV exposure, the composition for forming an EUV or electron-beam upper-layer resist film blocks undesirable exposure light, e.g., ultraviolet (UV) or deep ultraviolet (DUV) rays, and selectively transmits only the EUV rays, and can be developed using a developing solution after exposure.