2,2'-dibromo-3,3'-dithienylmethane | 17965-52-5

• 分子结构分类: 有机化合物 - 有机卤素化合物 - 芳基卤化物
• 英文名称: 2,2'-dibromo-3,3'-dithienylmethane
• 英文别名: bis(2-bromothiophen-3-yl)methane；bis(2-bromo-3-thienyl)methane；2-bromo-3-[(2-bromothiophen-3-yl)methyl]thiophene
• CAS: 17965-52-5
• 化学式: C₉H₆Br₂S₂
• 分子量: 338.087
• InChiKey: CGHDAVLRJKMPAU-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  5.3
• 重原子数：
  13
• 可旋转键数：
  2
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.11
• 拓扑面积：
  56.5
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  2,2'-dibromo-3,3'-dithienylmethane 在 铜 作用下， 以 N,N-二甲基甲酰胺 为溶剂， 反应 13.0h， 以44%的产率得到环戊联噻吩
  参考文献：
  名称：

  Fluorescent cyclopentadithiophene derivatives having phenyl-substituted silyl moieties

  摘要：

  4,4-Dimethylcyclopenta[2,1-b:3,4-b']dithiophene derivatives bearing trimethyl-, dimethylphenyl-, diphenylmethyl-, or triphenyl-silyl moieties were synthesized. The introduction of the silyl moieties onto cyclopenta[2,1-b:3,4-b']dithiophene induced fluorescent emission as well as the bathochromic shift of wavelength at the maximum absorption and fluorescence. It was found that the larger number of phenyl group on silyl moiety resulted in the higher fluorescence quantum yield. (C) 2011 Elsevier Ltd. All rights reserved.

  DOI：

  10.1016/j.tetlet.2011.05.128
• 作为产物：
  描述：

  di(3-thienyl)methanol 在 aluminum (III) chloride 、 N-溴代丁二酰亚胺(NBS) 、 lithium aluminium tetrahydride 作用下， 以 乙醚 、 N,N-二甲基甲酰胺 为溶剂， 反应 14.58h， 生成 2,2'-dibromo-3,3'-dithienylmethane
  参考文献：
  名称：

  Fluorescent cyclopentadithiophene derivatives having phenyl-substituted silyl moieties

  摘要：

  4,4-Dimethylcyclopenta[2,1-b:3,4-b']dithiophene derivatives bearing trimethyl-, dimethylphenyl-, diphenylmethyl-, or triphenyl-silyl moieties were synthesized. The introduction of the silyl moieties onto cyclopenta[2,1-b:3,4-b']dithiophene induced fluorescent emission as well as the bathochromic shift of wavelength at the maximum absorption and fluorescence. It was found that the larger number of phenyl group on silyl moiety resulted in the higher fluorescence quantum yield. (C) 2011 Elsevier Ltd. All rights reserved.

  DOI：

  10.1016/j.tetlet.2011.05.128

文献信息

• CONJUGATED POLYMERS
  申请人：D'lavari Mansoor

  公开号：US20140131628A1

  公开（公告）日：2014-05-15

  The invention relates to novel polymers containing one or more units derived from fused bis(thienothiophene) moieties, methods for their preparation and monomers used therein, blends, mixtures and formulations containing them, the use of the polymers, blends, mixtures and formulations as semiconductor in organic electronic (OE) devices, especially in organic photovoltaic (OPV) devices, and to OE and OPV devices comprising these polymers, blends, mixtures or formulations.

  该发明涉及含有一个或多个由融合的双噻吩噻吩基团衍生的单元的新型聚合物，其制备方法和其中使用的单体，混合物，配方，以及将这些聚合物，混合物，配方作为有机电子（OE）器件中的半导体的使用，特别是在有机光伏（OPV）器件中，并且涉及包含这些聚合物，混合物或配方的OE和OPV器件。
• Thiophene-based twisted bistricyclic aromatic ene with tricoordinate boron: a new n-type semiconductor
  作者：Yohei Adachi、Takanori Nomura、Shion Tazuhara、Hiroyoshi Naito、Joji Ohshita

  DOI：10.1039/d0cc07952a

  日期：——

  The incorporation of tricoordinate boron into conjugated systems is of current interest in the field of organic electronics. In this study, a tricoordinate boron-embedded thiophene-based bistricyclic aromatic ene (BAE) was synthesized as a new boron-containing conjugated system. The combination of tricoordinate boron and fused thiophene rings imposed the twisted conformation in the BAE structure, resulting

  在有机电子领域中，将三配位硼结合到共轭体系中是当前的关注点。在这项研究中，三坐标嵌入硼的噻吩基双三环芳香烯（BAE）被合成为一种新型的含硼共轭体系。三配位硼和稠合的噻吩环的组合在BAE结构中施加了扭曲的构象，从而导致低位LUMO的能量吸收狭窄。还进行了将高度缺电子的硼嵌入BAE应用于有机场效应晶体管（OFET）的初步研究，揭示了其适度的高电子迁移率。
• Amer, A.; Burkhardt, A.; Nkansah, A., Phosphorus, Sulfur and Silicon and the Related Elements, 1989, vol. 42, p. 63 - 72
  作者：Amer, A.、Burkhardt, A.、Nkansah, A.、Shabana, R.、Galal, A.,、et al.

  DOI：——

  日期：——
• AMER, A.;BURKHARDT, A.;NKANSAH, A.;SHABANA, R.;GALAL, A.;MARK, H. B. (JR)+, PHOSPH., SULFUR AND SILICON AND RELAT. ELEM., 42,(1989) N-2, C. 63-71
  作者：AMER, A.、BURKHARDT, A.、NKANSAH, A.、SHABANA, R.、GALAL, A.、MARK, H. B. (JR)+

  DOI：——

  日期：——