triphenylsulfonium 2-(1'-adamantane)carbonyloxy-1,1-difluoroethanesulfonate | 1048642-06-3

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: triphenylsulfonium 2-(1'-adamantane)carbonyloxy-1,1-difluoroethanesulfonate
• 英文别名: Triphenylsulfonium 2-(1-adamantanecarbonyloxy)-1,1-difluoroethanesulfonate；2-(adamantane-1-carbonyloxy)-1,1-difluoroethanesulfonate;triphenylsulfanium
• CAS: 1048642-06-3
• 化学式: C₁₃H₁₇F₂O₅S*C₁₈H₁₅S
• 分子量: 586.721
• InChiKey: NYSANSMMJNZACT-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  6.67
• 重原子数：
  40
• 可旋转键数：
  7
• 环数：
  7.0
• sp3杂化的碳原子比例：
  0.39
• 拓扑面积：
  92.9
• 氢给体数：
  0
• 氢受体数：
  7

反应信息

• 作为产物：
  描述：

  (2'-bromo-2',2'-difluoro)ethyl 1-adamantanecarboxylate 在 sodium dithionite 、 sodium tungstate (VI) dihydrate 、 双氧水 、 氯化三苯基硫 、 碳酸氢钠 作用下， 以 水 、 乙腈 为溶剂， 反应 93.5h， 生成 triphenylsulfonium 2-(1'-adamantane)carbonyloxy-1,1-difluoroethanesulfonate
  参考文献：
  名称：

  Compound for Photoacid Generator, Resist Composition Using the Same, and Pattern-Forming Method

  摘要：

  以下是用作优良的辐射敏感性酸发生剂的磺酸醋銨盐的化学式（1）。通过使用含有与化学式（1）对应的磺酸醋銨盐的抗蚀组合物，可以形成良好的图案： 其中R1代表一价有机基团，Q+代表磺銨阳离子或碘銨阳离子。

  公开号：

  US20130130175A1

文献信息

• Processes for Production of 2-Bromo-2,2-Difluoroethanol and 2-(Alkylcarbonyloxy)-1,1-Difluoroethanesulfonic Acid Salt
  申请人：Jodry Jonathan Joachim

  公开号：US20110015431A1

  公开（公告）日：2011-01-20

  Disclosed is a process for producing 2-bromo-2,2-difluoroethanol, which comprises reducing a bromodifluoroacetic acid derivative represented by the formula [1] by using an ate hydride complex as a reducing agent. 2-Bromo-2,2-difluoroethanol thus produced can be used as the starting material to carry out the esterification step, the sulfination step and the oxidation step in this order, thereby producing a 2-alkylcarbonyloxy-1,1-difluoroethanesulfonic acid salt, wherein A represents a substituted or unsubstituted linear, branched or cyclic alkoxy group having 1 to 20 carbon atoms, a substituted or unsubstituted aryloxy group having 6 to 15 carbon atoms, a heteroaryloxy group having 4 to 15 carbon atoms, or a halogen atom.

  揭示了一种生产2-溴-2,2-二氟乙醇的方法，包括使用醇盐氢化物复合物作为还原剂，通过还原由式[1]表示的溴二氟乙酸衍生物来实现。因此生产的2-溴-2,2-二氟乙醇可用作依次进行酯化步骤、磺化步骤和氧化步骤的起始物质，从而产生2-烷基羰氧基-1,1-二氟乙烷磺酸盐，其中A代表具有1至20个碳原子的取代或未取代的线性、支链或环烷氧基团，具有6至15个碳原子的取代或未取代的芳氧基团，具有4至15个碳原子的杂芳氧基团，或卤素原子。
• Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process
  申请人：Ohsawa Youichi

  公开号：US20100119970A1

  公开（公告）日：2010-05-13

  There is disclosed a resist lower-layer composition configured to be used by a multi-layer resist method used in lithography to form a layer lower than a photoresist layer acting as a resist upper layer film, wherein the resist lower-layer composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and wherein the resist lower-layer composition comprises, at least, a thermal acid generator for generating an acid represented by the general formula (1) by heating at a temperature of 100° C. or higher. RCOO—CH 2 CF 2 SO 3 − H + (1) There can be provided a resist lower-layer composition in a multi-layer resist method (particularly, a two-layer resist method and a three-layer resist method), which composition is used to form a layer lower than a photoresist layer acting as a resist upper layer film, which composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and which composition is capable of forming a resist lower layer film, intermediate-layered film, and the like having a higher anti-poisoning effect and exhibiting a lower load to the environment.

  揭示了一种抗性下层组合物，配置为在光刻中使用的多层抗性方法中使用，用于形成低于作为抗性上层膜的光刻胶层的一层，其中抗性下层组合物在形成下层后变得不溶解或难溶解于碱性显影剂中，且抗性下层组合物至少包括用于通过在100°C或更高温度下加热生成由通式（1）表示的酸的热酸发生剂。 可以提供一种抗性下层组合物，用于多层抗性方法（特别是双层抗性方法和三层抗性方法），该组合物用于形成低于作为抗性上层膜的光刻胶层的一层，该组合物在形成下层后变得不溶解或难溶解于碱性显影剂中，并且该组合物能够形成具有更高抗毒性效果并表现出对环境负荷较低的抗性下层膜、中间层膜等。
• Positive resist compositions and patterning process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US07993811B2

  公开（公告）日：2011-08-09

  A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units, represented by formula (1). The acid generator (B) is a specific sulfonium salt compound. When processed by lithography, the composition is improved in resolution and forms a pattern with a satisfactory mask fidelity and a minimal LER. Herein R1 is H or methyl, R2 is an acid labile group, R3 is CO2R4 when X is CH2, R3 is H or CO2R4 when X is O, R4 is a monovalent C1-C20 hydrocarbon group, and m is 1 or 2.

  一种正性光阻组合物包括(A)树脂组分，该组分在酸的作用下变得可溶于碱性显影剂，并且(B)酸发生剂。树脂(A)是一种聚合物，包含特定的重复单元，由公式(1)表示。酸发生剂(B)是一种特定的磺酸盐化合物。当通过光刻处理时，该组合物在分辨率方面得到改善，并形成具有令人满意的掩模保真度和最小LER的图案。其中，R1为H或甲基，R2为酸不稳定基团，当X为CH2时，R3为CO2R4，当X为O时，R3为H或CO2R4，R4为单价的C1-C20烃基，m为1或2。
• 2-(Alkylcarbonyloxy)-1, 1-Difluoroethanesulfonic Acid Salt and Method for Producing the Same
  申请人：Central Glass Company, Limited

  公开号：US20130317250A1

  公开（公告）日：2013-11-28

  By using an organic base when a carboxylic acid bromodifluoroethyl ester is sulfinated by using a sulfinating agent, there is obtained 2-(alkylcarbonyloxy)-1,1-difluoroethanesulfinic acid ammonium salt. By oxidizing the 2-(alkylcarbonyloxy)-1,1-difluoroethanesulfinic acid ammonium salt, there is obtained 2-(alkylcarbonyloxy)-1,1-difluoroethanesulfonic acid ammonium salt. By using the 2-(alkylcarbonyloxy)-1,1-difluoroethanesulfonic acid ammonium salt as a raw material and exchanging it into an onium salt directly or through saponification/esterification, there can be obtained a 2-alkylcarbonyloxy-1,1-difluoroethanesulfonic acid onium salt.

  在使用亚磺酰化试剂对羧酸溴二氟乙酯进行亚磺酰化反应时，使用有机碱，可以得到2-(烷基羰基氧基)-1,1-二氟乙烷亚磺酸铵盐。通过氧化2-(烷基羰基氧基)-1,1-二氟乙烷亚磺酸铵盐，可以得到2-(烷基羰基氧基)-1,1-二氟乙烷磺酸铵盐。通过直接将2-(烷基羰基氧基)-1,1-二氟乙烷磺酸铵盐或通过皂化/酯化交换成离子盐，可以得到2-烷基羰基氧基-1,1-二氟乙烷磺酸离子盐。
• POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS
  申请人：OHSAWA Youichi

  公开号：US20090186296A1

  公开（公告）日：2009-07-23

  A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units, represented by formula (1). The acid generator (B) is a specific sulfonium salt compound. When processed by lithography, the composition is improved in resolution and forms a pattern with a satisfactory mask fidelity and a minimal LER. Herein R 1 is H or methyl, m is 1 or 2, and n is 1 or 2.

  一种正性光刻胶组合物，包括（A）树脂成分，在酸的作用下变得可溶于碱性显影剂，并且（B）酸发生剂。树脂（A）是一种聚合物，包括特定重复单元，由公式（1）表示。酸发生剂（B）是一种特定的砜盐化合物。在光刻加工时，该组合物在分辨率方面得到改善，并形成具有满意的掩模保真度和最小LER的图案。其中R1为H或甲基，m为1或2，n为1或2。