THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS
申请人:Shin-Etsu Chemical Co., Ltd.
公开号:EP3657254A1
公开(公告)日:2020-05-27
The present invention is a thermosetting silicon-containing material containing one or more of a repeating unit shown by the following general formula (Sx-1), a repeating unit shown by the following general formula (Sx-2), and a partial structure shown by the following general formula (Sx-3):
where R1 represents an iodine-containing organic group; and R2 and R3 are each independently identical to R1, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms. This provides: a thermosetting silicon-containing material used for forming a resist underlayer film which is capable of contributing to sensitivity enhancement of an upper layer resist while keeping LWR thereof from degrading; a composition for forming a silicon-containing resist underlayer film, the composition containing the thermosetting silicon-containing material; and a patterning process using the composition.
本发明是一种热固性含硅材料,它含有一个或多个如下通式(Sx-1)所示的重复单元、如下通式(Sx-2)所示的重复单元和如下通式(Sx-3)所示的部分结构:
其中 R1 代表含碘有机基团;R2 和 R3 各自独立地与 R1、氢原子或具有 1 至 30 个碳原子的一价有机基团相同。本发明提供了:一种用于形成抗蚀剂底层薄膜的含硅热固性材料,该材料能够有助于提高上层抗蚀剂的灵敏度,同时使其低功耗不降低;一种用于形成含硅抗蚀剂底层薄膜的组合物,该组合物含有该含硅热固性材料;以及一种使用该组合物的图案化工艺。