1,4-dimethylanthracene-2-sulphonic acid | 74633-59-3

• 分子结构分类: 有机化合物 - 苯类化合物 - 蒽
• 英文名称: 1,4-dimethylanthracene-2-sulphonic acid
• 英文别名: 1,4-Dimethylanthracene-2-sulfonic acid；1,4-dimethylanthracene-2-sulfonic acid
• CAS: 74633-59-3
• 化学式: C₁₆H₁₄O₃S
• 分子量: 286.351
• InChiKey: GYUQGQIPKIGWRK-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.6
• 重原子数：
  20
• 可旋转键数：
  1
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.12
• 拓扑面积：
  62.8
• 氢给体数：
  1
• 氢受体数：
  3

反应信息

• 作为产物：
  描述：

  1,4-二甲基蒽 在 ²H₈ dioxane-SO₃ 作用下， 以 二氧六环-d8 为溶剂， 生成 1,4-dimethylanthracene-5-sulphonic acid 、 1,4-dimethylanthracene-6-sulphonic acid 、 1,4-dimethylanthracene-2-sulphonic acid
  参考文献：
  名称：

  Griendt, Freek van de; Visser, Cornelis P.; Cerfontain, Hans, Journal of the Chemical Society. Perkin transactions II, 1980, p. 911 - 914

  摘要：

  DOI：

文献信息

• PATTERN FORMATION METHODS AND PHOTORESIST PATTERN OVERCOAT COMPOSITIONS
  申请人：Rohm and Haas Electronic Materials LLC

  公开号：US20210232047A1

  公开（公告）日：2021-07-29

  A pattern formation method, comprising: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern overcoat composition over the photoresist pattern, wherein the pattern overcoat composition comprises a second polymer and an organic solvent, wherein the organic solvent comprises one or more ester solvents, wherein the ester solvent is of the formula R 1 —C(O)O—R 2 , wherein R 1 is a C3-C6 alkyl group and R 2 is a C5-C10 alkyl group; (d) baking the coated photoresist pattern; and (e) rinsing the coated photoresist pattern with a rinsing agent to remove the second polymer. The methods find particular applicability in the manufacture of semiconductor devices.