PATTERN FORMATION METHODS AND PHOTORESIST PATTERN OVERCOAT COMPOSITIONS
申请人:Rohm and Haas Electronic Materials LLC
公开号:US20210232047A1
公开(公告)日:2021-07-29
A pattern formation method, comprising: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern overcoat composition over the photoresist pattern, wherein the pattern overcoat composition comprises a second polymer and an organic solvent, wherein the organic solvent comprises one or more ester solvents, wherein the ester solvent is of the formula R
1
—C(O)O—R
2
, wherein R
1
is a C3-C6 alkyl group and R
2
is a C5-C10 alkyl group; (d) baking the coated photoresist pattern; and (e) rinsing the coated photoresist pattern with a rinsing agent to remove the second polymer. The methods find particular applicability in the manufacture of semiconductor devices.
Griendt, Freek van de; Visser, Cornelis P.; Cerfontain, Hans, Journal of the Chemical Society. Perkin transactions II, 1980, p. 911 - 914
作者:Griendt, Freek van de、Visser, Cornelis P.、Cerfontain, Hans