Materials for dielectrics and/or buffer layers in microelectronics utilize polymers can be based on bis-o-nitrophenols. The bis-o-nitrophenols carry a tert-butoxycarbonyl group on at least one of the hydroxyl groups. The polybenzoxazoles prepared from these compounds have a lower dielectric constant than corresponding polymers which are prepared from bis-o-nitrophenols that do not have a tert-butoxycarbonyl group.
微电子中用于电介质和/或缓冲层的材料可以使用基于双邻
硝基苯酚的聚合物。双邻
硝基苯酚至少有一个羟基上带有叔丁氧羰基。由这些化合物制备的聚
苯并恶唑的介电常数低于由没有叔丁氧羰基的双邻
硝基苯酚制备的相应聚合物的介电常数。