quinoxalo[6,5-b:7,8-b']bis[1]benzothiophene | 1347708-16-0

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 苯并噻吩类
• 英文名称: quinoxalo[6,5-b:7,8-b']bis[1]benzothiophene
• 英文别名: 3,24-Dithia-12,15-diazahexacyclo[15.7.0.02,10.04,9.011,16.018,23]tetracosa-1(17),2(10),4,6,8,11,13,15,18,20,22-undecaene；3,24-dithia-12,15-diazahexacyclo[15.7.0.02,10.04,9.011,16.018,23]tetracosa-1(17),2(10),4,6,8,11,13,15,18,20,22-undecaene
• CAS: 1347708-16-0
• 化学式: C₂₀H₁₀N₂S₂
• 分子量: 342.445
• InChiKey: IABBPWITTAORGP-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  5.9
• 重原子数：
  24
• 可旋转键数：
  0
• 环数：
  6.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  82.3
• 氢给体数：
  0
• 氢受体数：
  4

反应信息

• 作为产物：
  描述：

  (benzo[b]thiophen-3-yl)trimethylstannane 在 bis-triphenylphosphine-palladium(II) chloride 、 碘 、 氧气 作用下， 以 N,N-二甲基甲酰胺 、 甲苯 为溶剂， 反应 15.0h， 生成 quinoxalo[6,5-b:7,8-b']bis[1]benzothiophene
  参考文献：
  名称：

  Synthesis, Crystal Structures, and Electronic Properties of Nonlinear Fused Thienoacene Semiconductors

  摘要：

  Two fused thienoacene compounds with two-dimensional ring connectivity were synthesized, and their semiconducting properties were characterized. Both compounds have a crystal structure comprised of herringbone arrays of tight pi-pi stacks. Strong pi-pi interactions lead to self-assembly into well-defined crystalline thin films from the vapor phase for both compounds. Field effect transistors were fabricated, affording identical hole mobilities of 3.0 x 10(-3) cm(2)/(V s) and l(on/off) > 10(5).

  DOI：

  10.1021/ol202662s

文献信息

• Synthesis, Crystal Structures, and Electronic Properties of Nonlinear Fused Thienoacene Semiconductors
  作者：Hayden T. Black、Shubin Liu、Valerie Sheares Ashby

  DOI：10.1021/ol202662s

  日期：2011.12.16

  Two fused thienoacene compounds with two-dimensional ring connectivity were synthesized, and their semiconducting properties were characterized. Both compounds have a crystal structure comprised of herringbone arrays of tight pi-pi stacks. Strong pi-pi interactions lead to self-assembly into well-defined crystalline thin films from the vapor phase for both compounds. Field effect transistors were fabricated, affording identical hole mobilities of 3.0 x 10(-3) cm(2)/(V s) and l(on/off) > 10(5).