Comparison of Tetraphenylmethane and Tetraphenylsilane as Core Structures of High-Triplet-Energy Hole- and Electron-Transport Materials
作者:Chil Won Lee、Jun Yeob Lee
DOI:10.1002/chem.201103640
日期:2012.5.21
Tetraphenylmethane and tetraphenylsilane were compared as building units for high‐triplet‐energy, charge‐transport materials. Tetraphenylsilane is effective as the building unit in electron‐transport materials, whereas tetraphenylmethane is suitable in hole‐transport materials (see figure; TSPO1=diphenylphosphine oxide‐4‐(triphenylsilyl), TSPA=phenyl‐N,N‐diphenyl‐4‐(triphenylsilyl)aniline, and TCPA=N