Verfahren zur Herstellung von Isocyanuratgruppen aufweisenden Polyisocyanaten
申请人:BAYER AG
公开号:EP0339396A1
公开(公告)日:1989-11-02
Ein neues Verfahren zur Herstellung von Isocyanuratgruppen aufweisenden Polyisocyanaten mit aliphatisch und/oder cycloaliphatisch gebundenen Isocyanatgruppen durch Trimerisierung eines Teils der Isocyanatgruppen von organischen Diisocyanaten mit aliphatisch und/oder cycloaliphatisch gebundenen Isocyanatgruppen in Gegenwart eines Trimerisierungskatalysators, wobei man als Trimerisierungskatalysator quaternäre Ammoniumfluoride verwendet, und die Verwendung der nach dem Verfahren erhältlichen, Isocyanuratgruppen aufweisenden Polyisocyanate, gegebenenfalls in mit Blockierungsmitteln für Isocyanatgruppen blockierter Form, als Isocyanatkomponente in Polyurethanlacken.
An object of the present invention is to provide a curable composition made mainly of an organic polymer having a reactive silicon group, exhibits a good curability without using any organic tin compound substantially, and gives a cured product having a sufficient strength; and to provide a catalyst composition. The object is solved by a curable composition, comprising a polymer (A) having a silicon-containing group which can be crosslinked by forming a siloxane bond, and a fluoride salt compound (B).
SEMICONDUCTOR SURFACE TREATING AGENT COMPOSITION AND METHOD FOR TREATING SEMICONDUCTOR SURFACE USING THE SEMICONDUCTOR SURFACE TREATING AGENT COMPOSITION
申请人:Wako Pure Chemical Industries, Ltd.
公开号:EP2249206A1
公开(公告)日:2010-11-10
An object of the present invention is to provide a semiconductor surface treating agent composition, which can realize easy removing of an anti-reflection coating layer in a production process of a semiconductor device or the like at a low temperature in a short time, a method for treating a semiconductor surface using the same, and further a semiconductor surface treating agent composition, which can realize not only removing of both layer of an anti-reflection coating layer and a resist layer, but can realize even removing of a cured resist layer produced in an etching process, and a method for treating a semiconductor surface using the same. The semiconductor surface treating agent composition of the present invention is characterized by comprising a compound which generates a fluorine ion in water, a carbon radical generating agent, and water and optionally an organic solvent, and the method for treating a semiconductor surface of the present invention is characterized by using the composition.
An object of the present invention is to provide a curable composition made mainly of an organic polymer having a reactive silicon group, exhibits a good curability without using any organic tin compound substantially, and gives a cured product having a sufficient strength; and to provide a catalyst composition. The object is solved by a curable composition, comprising a polymer (A) having a silicon-containing group which can be crosslinked by forming a siloxane bond, and a fluoride salt compound (B).
PROCESSING AGENT COMPOSITION FOR SEMICONDUCTOR SURFACE AND METHOD FOR PROCESSING SEMICONDUCTOR SURFACE USING SAME
申请人:Wako Pure Chemical Industries, Ltd.
公开号:EP2475000A1
公开(公告)日:2012-07-11
The present invention is directed to provide a semiconductor surface treating agent composition which is capable of stripping an anti-reflection coating layer, a resist layer, and a cured resist layer in the production process of a semiconductor device and the like easily and in a short time, as well as a method for treating a semiconductor surface, comprising that the composition is used. The present invention relates to a semiconductor surface treating agent composition, comprising [I] a compound generating a fluorine ion in water, [11] a carbon radical generating agent, [111] water, [IV] an organic solvent, and [V] at least one kind of compound selected from a group consisting of hydroxylamine and a hydroxylamine derivative represented by the general formula [1], as well as a method for treating the semiconductor surface, comprising that the composition is used:
(wherein R1 represents a linear, branched or cyclic C1-6 alkyl group, or a linear or branched C1-4 substituted alkyl group having 1 to 3 hydroxyl groups; R2 represents a hydrogen atom, a linear, branched or cyclic C1-6 alkyl group, or a linear or branched C1-4 substituted alkyl group having 1 to 3 hydroxyl groups).