7,8,9,10-tetrafluoro-tetraceno[2,3-b]thiophene | 1027301-01-4

• 分子结构分类: 有机化合物 - 苯类化合物 - 并四苯
• 英文名称: 7,8,9,10-tetrafluoro-tetraceno[2,3-b]thiophene
• 英文别名: 16,17,18,19-Tetrafluoro-6-thiapentacyclo[11.8.0.03,11.05,9.015,20]henicosa-1(21),2,4,7,9,11,13,15(20),16,18-decaene
• CAS: 1027301-01-4
• 化学式: C₂₀H₈F₄S
• 分子量: 356.343
• InChiKey: QXGCMHXXKHZEEX-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  6.5
• 重原子数：
  25
• 可旋转键数：
  0
• 环数：
  5.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  28.2
• 氢给体数：
  0
• 氢受体数：
  5

反应信息

• 作为反应物：
  描述：

  7,8,9,10-tetrafluoro-tetraceno[2,3-b]thiophene 、 三异丙基硅基乙炔 在 正丁基锂 、 盐酸 、 tin(ll) chloride 作用下， 以 乙醚 为溶剂， 反应 1.5h， 以70%的产率得到7,8,9,10-tetrafluoro-5,12-bis(triisopropylsilylethynyl)tetraceno[2,3-b]thiophene
  参考文献：
  名称：

  Ambipolar, High Performance, Acene-Based Organic Thin Film Transistors

  摘要：

  We present a high performance, ambipolar organic field-effect transistor composed of a single material. Ambipolar molecules are rare, and they can enable low-power complementary-like circuits. This low band gap, asymmetric linear acene contains electron-withdrawing fluorine atoms, which lower the C; molecular orbital energies, allowing the injection of electrons. While hole and electron mobilities of up to 0.071 and 0.37 cm(2)/ V center dot s, respectively, are reported on devices measured in nitrogen, hole mobilities of up to 0.12 cm(2)/V center dot s were found in ambient, with electron transport quenched. These devices were fabricated on octadecyltrimethoxysilane-treated surfaces at a substrate temperature of 60 degrees C.

  DOI：

  10.1021/ja8005918
• 作为产物：
  描述：

  7,8,9,10-tetrafluoro-tetraceno[2,3-b]thiophene-5,12-dione 在 四溴化碳 、 氢化铝 、 mercury dichloride 作用下， 以 环己醇 为溶剂， 生成 7,8,9,10-tetrafluoro-tetraceno[2,3-b]thiophene
  参考文献：
  名称：

  Ambipolar, High Performance, Acene-Based Organic Thin Film Transistors

  摘要：

  We present a high performance, ambipolar organic field-effect transistor composed of a single material. Ambipolar molecules are rare, and they can enable low-power complementary-like circuits. This low band gap, asymmetric linear acene contains electron-withdrawing fluorine atoms, which lower the C; molecular orbital energies, allowing the injection of electrons. While hole and electron mobilities of up to 0.071 and 0.37 cm(2)/ V center dot s, respectively, are reported on devices measured in nitrogen, hole mobilities of up to 0.12 cm(2)/V center dot s were found in ambient, with electron transport quenched. These devices were fabricated on octadecyltrimethoxysilane-treated surfaces at a substrate temperature of 60 degrees C.

  DOI：

  10.1021/ja8005918

文献信息

• Organic Semiconductors
  申请人：Tang Ming L.

  公开号：US20080142793A1

  公开（公告）日：2008-06-19

  Organic semiconducting devices and applications exhibit high performance largely due to a treatment substrate interacting with an asymmetric linear compound. According to an example, an organic compound arrangement includes a treated substrate and an asymmetric linear compound on the treated substrate. The compound includes an acene and a thiophene unit fused to the acene and exhibits high mobility and, in some applications, a correspondingly high on/off ratio. The compound arrangement is suitable for implementation with a variety of semiconducting applications, such as thin-film applications, solar applications and transistor applications.
• Ambipolar, High Performance, Acene-Based Organic Thin Film Transistors
  作者：Ming L. Tang、Anna D. Reichardt、Nobuyuki Miyaki、Randall M. Stoltenberg、Zhenan Bao

  DOI：10.1021/ja8005918

  日期：2008.5.1

  We present a high performance, ambipolar organic field-effect transistor composed of a single material. Ambipolar molecules are rare, and they can enable low-power complementary-like circuits. This low band gap, asymmetric linear acene contains electron-withdrawing fluorine atoms, which lower the C; molecular orbital energies, allowing the injection of electrons. While hole and electron mobilities of up to 0.071 and 0.37 cm(2)/ V center dot s, respectively, are reported on devices measured in nitrogen, hole mobilities of up to 0.12 cm(2)/V center dot s were found in ambient, with electron transport quenched. These devices were fabricated on octadecyltrimethoxysilane-treated surfaces at a substrate temperature of 60 degrees C.