2,3-dimethoxy-5a,6,11,11a-tetrahydro-5,12-naphthacenedione | 1028276-55-2

• 分子结构分类: 有机化合物 - 苯类化合物 - 并四苯
• 英文名称: 2,3-dimethoxy-5a,6,11,11a-tetrahydro-5,12-naphthacenedione
• 英文别名: 2,3-Dimethoxy-5a,6,11,11a-tetrahydrotetracene-5,12-dione
• CAS: 1028276-55-2
• 化学式: C₂₀H₁₈O₄
• 分子量: 322.361
• InChiKey: NRFYWNHSLJTYLJ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.1
• 重原子数：
  24
• 可旋转键数：
  2
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.3
• 拓扑面积：
  52.6
• 氢给体数：
  0
• 氢受体数：
  4

反应信息

• 作为反应物：
  描述：

  2,3-dimethoxy-5a,6,11,11a-tetrahydro-5,12-naphthacenedione 在 吡啶 、 溴 作用下， 以 N,N-二甲基甲酰胺 为溶剂， 以96%的产率得到2,3-dimethoxy-5,12-naphthacenequinone
  参考文献：
  名称：

  Attaching Organic Semiconductors to Gate Oxides:  In Situ Assembly of Monolayer Field Effect Transistors

  摘要：

  This study unveils a new tetracene derivative that forms dense, upright monolayers on the surface of aluminum oxide. These monolayers spontaneously self-organize into the active layer in nanoscale field-effect transistor devices when aluminum oxide is used as the dielectric layer. This method gives high yields of working devices that have source-drain distances that are less than 60 nm, thereby providing a method to electrically probe the monolayer assemblies formed from approximately 10 zeptomoles of material (approximately 104 molecules). Moreover, this study delineates a new avenue for research in thin-film organic transistors where the active molecules are linked to the dielectric surface to form a monolayer transistor.

  DOI：

  10.1021/ja044101z
• 作为产物：
  描述：

  2,3-二甲氧基-1,3-丁二烯 以 甲苯 、 苯 为溶剂， 反应 24.0h， 生成 2,3-dimethoxy-5a,6,11,11a-tetrahydro-5,12-naphthacenedione
  参考文献：
  名称：

  Attaching Organic Semiconductors to Gate Oxides:  In Situ Assembly of Monolayer Field Effect Transistors

  摘要：

  This study unveils a new tetracene derivative that forms dense, upright monolayers on the surface of aluminum oxide. These monolayers spontaneously self-organize into the active layer in nanoscale field-effect transistor devices when aluminum oxide is used as the dielectric layer. This method gives high yields of working devices that have source-drain distances that are less than 60 nm, thereby providing a method to electrically probe the monolayer assemblies formed from approximately 10 zeptomoles of material (approximately 104 molecules). Moreover, this study delineates a new avenue for research in thin-film organic transistors where the active molecules are linked to the dielectric surface to form a monolayer transistor.

  DOI：

  10.1021/ja044101z

文献信息

• Attaching Organic Semiconductors to Gate Oxides:  In Situ Assembly of Monolayer Field Effect Transistors
  作者：George S. Tulevski、Qian Miao、Masafumi Fukuto、Rebecca Abram、Benjamin Ocko、Ronald Pindak、Michael L. Steigerwald、Cherie R. Kagan、Colin Nuckolls

  DOI：10.1021/ja044101z

  日期：2004.11.1

  This study unveils a new tetracene derivative that forms dense, upright monolayers on the surface of aluminum oxide. These monolayers spontaneously self-organize into the active layer in nanoscale field-effect transistor devices when aluminum oxide is used as the dielectric layer. This method gives high yields of working devices that have source-drain distances that are less than 60 nm, thereby providing a method to electrically probe the monolayer assemblies formed from approximately 10 zeptomoles of material (approximately 104 molecules). Moreover, this study delineates a new avenue for research in thin-film organic transistors where the active molecules are linked to the dielectric surface to form a monolayer transistor.