3-methylseleno-2-naphthaldehyde | 935280-44-7

• 分子结构分类: 有机化合物 - 苯类化合物 - 萘
• 英文名称: 3-methylseleno-2-naphthaldehyde
• 英文别名: 3-Methylselanylnaphthalene-2-carbaldehyde；3-methylselanylnaphthalene-2-carbaldehyde
• CAS: 935280-44-7
• 化学式: C₁₂H₁₀OSe
• 分子量: 249.171
• InChiKey: UTHNTLNTRRMSNI-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.03
• 重原子数：
  14
• 可旋转键数：
  2
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.08
• 拓扑面积：
  17.1
• 氢给体数：
  0
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  3-methylseleno-2-naphthaldehyde 在 四氯化钛 、 锌 作用下， 以 四氢呋喃 为溶剂， 以77%的产率得到trans-1,2-bis(3-methylseleno-2-naphthyl)ethene
  参考文献：
  名称：

  Facile Synthesis of Highly π-Extended Heteroarenes, Dinaphtho[2,3-b:2‘,3‘-f]chalcogenopheno[3,2-b]chalcogenophenes, and Their Application to Field-Effect Transistors

  摘要：

  A facile three-step synthetic procedure for highly pi-extended heteroarenes, dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) and dinaphtho[2,3-b:2',3'-f]selenopheno[3,2-b]selenophene (DNSS), was established. Solution UV-vis spectra and electrochemistry indicated that they have relatively low-lying HOMO levels and large HOMO-LUMO energy gaps. OFET devices fabricated with evaporated thin-films of DNTT and DNSS showed excellent FET characteristics in air, and the highest field-effect mobility of DNTT- and DNSS-based OFETs is 2.9 and 1.9 cm(2) V-1 s(-1), respectively.

  DOI：

  10.1021/ja068429z
• 作为产物：
  描述：

  2-萘甲醛 、 碘甲烷 在 正丁基锂 、 N,N,N'-三甲基乙二胺 作用下， 以 四氢呋喃 、 正己烷 为溶剂， 反应 1.66h， 以32%的产率得到3-methylseleno-2-naphthaldehyde
  参考文献：
  名称：

  NOVEL FUSED-RING AROMATIC COMPOUND, PROCESS FOR PRODUCING THE SAME, AND USE THEREOF

  摘要：

  公开号：

  EP2098527B1

文献信息

• NOVEL FUSED-RING AROMATIC COMPOUND, PROCESS FOR PRODUCING THE SAME, AND USE THEREOF
  申请人：Nippon Kayaku Kabushiki Kaisha

  公开号：EP2098527B1

  公开（公告）日：2016-03-30
• Facile Synthesis of Highly π-Extended Heteroarenes, Dinaphtho[2,3-<i>b</i>:2‘,3‘-<i>f</i>]chalcogenopheno[3,2-<i>b</i>]chalcogenophenes, and Their Application to Field-Effect Transistors
  作者：Tatsuya Yamamoto、Kazuo Takimiya

  DOI：10.1021/ja068429z

  日期：2007.2.1

  A facile three-step synthetic procedure for highly pi-extended heteroarenes, dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) and dinaphtho[2,3-b:2',3'-f]selenopheno[3,2-b]selenophene (DNSS), was established. Solution UV-vis spectra and electrochemistry indicated that they have relatively low-lying HOMO levels and large HOMO-LUMO energy gaps. OFET devices fabricated with evaporated thin-films of DNTT and DNSS showed excellent FET characteristics in air, and the highest field-effect mobility of DNTT- and DNSS-based OFETs is 2.9 and 1.9 cm(2) V-1 s(-1), respectively.