MIXALENKO S. A.; DERKACHEVA V. M.; LUKYANETS E. A., ZH. OBSHCH. XIMII, 1981, 51, HO 7, 1650-1657
作者:MIXALENKO S. A.、 DERKACHEVA V. M.、 LUKYANETS E. A.
DOI:——
日期:——
RESIST UNDERLAYER FILM FORMATION COMPOSITION AND METHOD FOR FORMING RESIST PATTERN USING THE SAME
申请人:NISSAN CHEMICAL INDUSTRIES, LTD.
公开号:US20160238936A1
公开(公告)日:2016-08-18
A novel resist underlayer film formation composition for lithography includes: a polymer having a structure of Formula (1) at a terminal of a polymer chain; a cross-linking agent; a compound promoting a cross-linking reaction; and an organic solvent:
(where R
1
, R
2
, and R
3
are each independently a hydrogen atom, a linear or branched C
1-13
alkyl group, a halogeno group, or a hydroxy group; at least one of R
1
, R
2
, and R
3
is the alkyl group; Ar is a benzene ring, a naphthalene ring, or an anthracene ring; two carbonyl groups are bonded to respective two adjacent carbon atoms of Ar; and X is a linear or branched C
1-6
alkyl group optionally having a C
1-3
alkoxy group as a substituent).