5,5-Dichlornonan | 73642-92-9

• 分子结构分类: 有机化合物 - 有机卤素化合物 - 有机氯化物
• 英文名称: 5,5-Dichlornonan
• 英文别名: 5,5-Dichlorononane
• CAS: 73642-92-9
• 化学式: C₉H₁₈Cl₂
• 分子量: 197.148
• InChiKey: YWFAMHSXHZEIAQ-UHFFFAOYSA-N

物化性质

• 沸点：
  86 °C(Press: 0.1 Torr)
• 密度：
  0.986±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  5
• 重原子数：
  11
• 可旋转键数：
  6
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为反应物：
  描述：

  5,5-Dichlornonan 在 18-冠醚-6 、 potassium tert-butylate 作用下， 以 Petroleum ether 为溶剂， 反应 6.0h， 以89%的产率得到4-壬炔
  参考文献：
  名称：

  Dehmlow, Eckehard V.; Lissel, Manfred, Liebigs Annalen der Chemie, 1980, # 1, p. 1 - 13

  摘要：

  DOI：
• 作为产物：
  描述：

  5-壬酮 在 五氯化磷 作用下， 以 苯 为溶剂， 反应 12.0h， 以31%的产率得到5,5-Dichlornonan
  参考文献：
  名称：

  Dehmlow, Eckehard V.; Lissel, Manfred, Liebigs Annalen der Chemie, 1980, # 1, p. 1 - 13

  摘要：

  DOI：

文献信息

• METHOD FOR PRODUCING POLYMER, POLYMER, COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING INSULATING FILM, AND INSULATING FILM
  申请人：JSR Corporation

  公开号：EP1705206A1

  公开（公告）日：2006-09-27

  There are provided a method for producing a polymer, a polymer, an insulating-film-forming composition, a method for producing an insulating film, and an insulating film capable of forming a film which is suitably used as an interlayer dielectric for semiconductor devices or the like and exhibits a low relative dielectric constant, excellent mechanical strength and adhesion, and uniform quality. A method for producing a polymer of the invention comprises hydrolyzing and condensing (B) a hydrolyzable-group-containing silane monomer in the presence of (A) a polycarbosilane, the polycarbosilane (A) being a polymer (I) obtained by reacting (a) a compound shown by the following general formula (1) and (b) at least one compound selected from the group consisting of a compound shown by the following general formula (2) and a compound shown by the following general formula (3) in an organic solvent in the presence of at least one of an alkali metal and an alkaline earth metal,         R1kCX4-k     (1)         R2kSiY4-k     (2)         R3mY3-mSiCR4nX3-n     (3) wherein R1 to R4 individually represent a monovalent organic group or a hydrogen atom, X represents a halogen atom, Y represents a halogen atom or an alkoxy group, k represents an integer from 0 to 3, and m and n individually represent integers from 0 to 2.

  本发明提供了一种聚合物的生产方法、一种聚合物、一种绝缘成膜组合物、一种绝缘膜的生产方法，以及一种能够形成薄膜的绝缘膜，该薄膜适合用作半导体器件或类似器件的层间电介质，并具有较低的相对介电常数、优异的机械强度和附着力以及均匀的质量。 生产本发明聚合物的方法包括在（A）聚碳酸酯硅烷存在下水解和缩合（B）含可水解基团的硅烷单体、聚碳硅烷(A)为聚合物(I)，由(a)下式(1)所示化合物和(b)至少一种选自下式(2)所示化合物和下式(3)所示化合物组成的组的化合物在有机溶剂中，在碱金属和碱土金属中至少一种存在下反应而得、 R1kCX4-k (1) R2kSiY4-k (2) R3mY3-mSiCR4nX3-n (3) 其中 R1 至 R4 分别代表一价有机基团或氢原子，X 代表卤素原子，Y 代表卤素原子或烷氧基，k 代表 0 至 3 的整数，m 和 n 分别代表 0 至 2 的整数。
• DEHMLOW E. V.; LISSEL M., LIEBIGS ANN. CHEM., 1980, NO 1, 1-13
  作者：DEHMLOW E. V.、 LISSEL M.

  DOI：——

  日期：——
• METALLOCENE COMPOUNDS AS CATALYST COMPONENTS FOR OLEFIN POLYMERIZATION
  申请人：Chisso Corporation

  公开号：EP1066300A1

  公开（公告）日：2001-01-10
• Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film
  申请人：Nakagawa Hisashi

  公开号：US20070015892A1

  公开（公告）日：2007-01-18

  A method for producing a polymer includes hydrolyzing and condensing (B) a hydrolyzable-group-containing silane monomer in the presence of (A) a polycarbosilane, the polycarbosilane (A) being a polymer (I) obtained by reacting (a) a compound shown by the following general formula (1) and (b) at least one compound selected from the group consisting of a compound shown by the following general formula (2) and a compound shown by the following general formula (3) in an organic solvent in the presence of at least one of an alkali metal and an alkaline earth metal, R 1 k CX 4-k (1) R 2 k SiY 4-k (2) R 3 m Y 3-m SiCR 4 n X 3-n (3) wherein R 1 to R 4 individually represent a monovalent organic group or a hydrogen atom, X represents a halogen atom, Y represents a halogen atom or an alkoxy group, k represents an integer from 0 to 3, and m and n individually represent integers from 0 to 2.
• US4181659A
  申请人：——

  公开号：US4181659A

  公开（公告）日：1980-01-01