申请人:Shin-Etsu Chemical Co., Ltd.
公开号:US20200249571A1
公开(公告)日:2020-08-06
A resist composition comprising a sulfonium salt having formula (1) as PAG, a base polymer, and an organic solvent, when processed by lithography, has light transmittance, acid diffusion suppressing effect, and excellent lithography performance factors such as DOF, LWR and MEF. A lithography process for forming a resist pattern from the composition is also provided.
一种抗蚀组合物,包括具有公式(1)作为PAG的磺酸盐、基础聚合物和有机溶剂。在光刻工艺中加工时,该组合物具有光透过率、抑制酸扩散效果和优异的光刻性能因素,例如DOF、LWR和MEF。还提供了一种从该组合物形成抗蚀图案的光刻工艺。