1-Diethylamino-2-methylpentan-2-ol | 58124-08-6

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: 1-Diethylamino-2-methylpentan-2-ol
• 英文别名: 1-Diethylamino-2-methyl-2-hydroxy-pentan；1-Diaethylamino-2-hydroxy-2-methyl-pentan；1-(diethylamino)-2-methylpentan-2-ol
• CAS: 58124-08-6
• 化学式: C₁₀H₂₃NO
• 分子量: 173.299
• InChiKey: SXCKDSXGLKRTSY-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.8
• 重原子数：
  12
• 可旋转键数：
  6
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  23.5
• 氢给体数：
  1
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  环氧-1,2-甲基-2-戊炔-3 在 钯 氢气 作用下， 以 乙醇 、 水 为溶剂， 生成 1-Diethylamino-2-methylpentan-2-ol
  参考文献：
  名称：

  Perveev,F.Ya.; Demidova,V.M., Journal of general chemistry of the USSR, 1962, vol. 32, p. 114 - 117

  摘要：

  DOI：

文献信息

• METAL ALKOXIDE COMPOUND, THIN-FILM-FORMING MATERIAL, METHOD FOR PRODUCING THIN FILM, AND ALCOHOL COMPOUND
  申请人：ADEKA CORPORATION

  公开号：US20150175642A1

  公开（公告）日：2015-06-25

  Disclosed is a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. A metal alkoxide compound is represented by general formula (I). A thin-film-forming material including the metal alkoxide compound is described as well. (In the formula, R 1 represents a methyl group or an ethyl group, R 2 represents a hydrogen atom or a methyl group, R 3 represents a C 1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.

  揭示了一种具有适合用于CVD形成薄膜材料的物理性质的金属烷氧化物化合物，特别是一种具有适合用于形成金属铜薄膜材料的金属烷氧化物化合物。金属烷氧化物化合物由通式（I）表示。还描述了包括金属烷氧化物化合物的薄膜形成材料。（在公式中，R1代表甲基基团或乙基基团，R2代表氢原子或甲基基团，R3代表C1-3直链或支链烷基基团，M代表金属原子或硅原子，n代表金属原子或硅原子的价。
• THIN-FILM FORMING RAW MATERIAL FOR USE IN ATOMIC LAYER DEPOSITION METHOD, THIN-FILM FORMING RAW MATERIAL, METHOD FOR PRODUCING THIN-FILM, AND COMPOUND
  申请人：ADEKA CORPORATION

  公开号：US20210340162A1

  公开（公告）日：2021-11-04

  The present invention provides a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented by the following general formula (1): where R 1 to R 4 each independently represent an alkyl group having 1 to 5 carbon atoms, and A 1 represents an alkanediyl group having 1 to 5 carbon atoms.

  本发明提供了一种薄膜形成原料，用于原子层沉积方法，包括由以下一般式（1）表示的化合物：其中R1至R4分别独立表示具有1至5个碳原子的烷基基团，A1表示具有1至5个碳原子的烷二基基团。
• RAW MATERIAL FOR FORMING THIN FILM BY ATOMIC LAYER DEPOSITION METHOD AND METHOD FOR PRODUCING THIN FILM
  申请人：ADEKA CORPORATION

  公开号：US20210155638A1

  公开（公告）日：2021-05-27

  Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including a magnesium compound represented by the following general formula (1): where R 1 represents an isopropyl group, a sec-butyl group, or a tert-butyl group. A thin-film containing a magnesium atom is produced on a surface of a substrate with high productivity through use of the raw material.

  提供了一种用于原子层沉积方法的薄膜形成原料，包括由以下一般式（1）表示的镁化合物： 其中，R1代表异丙基基团、仲丁基团或叔丁基团。通过使用该原料，在基板表面上高效地生产含有镁原子的薄膜。
• METAL ALKOXIDE COMPOUND, THIN FILM FORMING RAW MATERIAL, AND THIN FILM PRODUCTION METHOD
  申请人：ADEKA CORPORATION

  公开号：US20200140463A1

  公开（公告）日：2020-05-07

  The present invention provides a metal alkoxide compound represented by the following general formula (1), a thin-film-forming raw material containing the same, and a thin film production method of forming a metal-containing thin film using the raw material:

  本发明提供一种由以下通式（1）表示的金属烷氧基化合物，包含该化合物的薄膜形成原料，以及使用该原料形成含金属薄膜的薄膜制备方法：
• METAL ALKOXIDE COMPOUND, THIN FILM-FORMING STARTING MATERIAL, METHOD FOR PRODUCING THIN FILM, AND ALCOHOL COMPOUND
  申请人：Adeka Corporation

  公开号：EP2921472A1

  公开（公告）日：2015-09-23

  The present invention provides a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. Specifically, the present invention provides a metal alkoxide compound represented by general formula (I), and a thin-film-forming material including the metal alkoxide compound. (In the formula, R1 represents a methyl group or an ethyl group, R2 represents a hydrogen atom or a methyl group, R3 represents a C1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.

  本发明提供了一种金属氧化烷化合物，其物理性质适用于通过 CVD 形成薄膜的材料，特别是一种金属氧化烷化合物，其物理性质适用于形成金属铜薄膜的材料。具体地说，本发明提供了一种由通式（I）表示的金属氧化烷化合物，以及一种包括该金属氧化烷化合物的成膜材料。(式中：R1 代表甲基或乙基，R2 代表氢原子或甲基，R3 代表 C1-3 直链或支链烷基，M 代表金属原子或硅原子，n 代表金属原子或硅原子的价。