申请人:——
公开号:US20040063595A1
公开(公告)日:2004-04-01
A composition for stripping photoresist, methods of preparing and forming the same, a method of manufacturing a semiconductor device using the composition, and a method of removing a photoresist pattern from an underlying layer using the composition, where the composition may include an ethoxy N-hydroxyalkyl alkanamide represented by the formula, CH
3
CH
2
—O—R
3
—CO—N—R
1
R
2
OH, an alkanolamine and a polar material. Raw materials of alkyl alkoxy alkanoate, represented by a chemical formula of R
4
—O—R
3
—COOR
5
, and alkanolamine, represented by a chemical formula of NHR
1
R
2
OH, may be mixed to form a mixture, which is stirred and cooled to obtain the composition. The composition may balance exfoliation and dissolution of photoresist patterns, and may potentially eliminate thread-type residues from remaining on a surface of an underlying layer after removing the photoresist patterns.
一种用于剥离光刻胶的组合物,制备和形成该组合物的方法,使用该组合物制造半导体器件的方法,以及使用该组合物从底层去除光刻胶图案的方法,其中该组合物可包括由式 CH 代表的乙氧基 N-羟基烷基酰胺,CH
3
CH
2
-O-R
3
-CO-N-R
1
R
2
OH、一种烷醇胺和一种极性物质。烷基烷氧基烷酸酯原料,化学式为 R
4
-O-R
3
-COOR
5
和烷醇胺,化学式为 NHR
1
R
2
OH 表示的烷醇胺混合形成混合物,经搅拌和冷却后得到组合物。该组合物可平衡光刻胶图案的剥离和溶解,并有可能在去除光刻胶图案后消除残留在底层表面的线型残留物。