4-Hydroxybutyl(trimethyl)azanium;hydroxide | 58390-09-3

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: 4-Hydroxybutyl(trimethyl)azanium;hydroxide
• CAS: 58390-09-3
• 化学式: C₇H₁₈NO*HO
• 分子量: 149.233
• InChiKey: YZHQBWDNOANICQ-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  0.29
• 重原子数：
  10
• 可旋转键数：
  4
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  21.2
• 氢给体数：
  2
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  4-Hydroxybutyl(trimethyl)azanium;hydroxide 生成 四氢呋喃
  参考文献：
  名称：

  BARBRY, D.;HASIAK, B., COLLECT. CZECH. CHEM. COMMUN., 1983, 48, N 6, 1734-1744

  摘要：

  DOI：

文献信息

• pH Adjusted nonionic surfactant containing alkaline cleaner composition for cleaning microelectronics substrates
  申请人：MALLINCKRODT BAKER, Inc.

  公开号：EP0678571A2

  公开（公告）日：1995-10-25

  Aqueous alkaline cleaning solutions for cleaning microelectronic substrates and maintaining substrate surface smoothness comprise a metal ion free base, a nonionic surfactant and a component to reduce or control the pH of the cleaning solution to a pH within the range of from about pH 8 to about pH 10.

  用于清洁微电子基底和保持基底表面光滑度的碱性水基清洁溶液包括一种不含金属离子的碱、一种非离子表面活性剂和一种将清洁溶液的 pH 值降低或控制在约 pH 8 至约 pH 10 范围内的成分。
• Cleaning wafer substrates of metal contamination while maintaining wafer smoothness
  申请人：MALLINCKRODT BAKER, Inc.

  公开号：EP0690483A2

  公开（公告）日：1996-01-03

  Process for cleaning wafer substrates of metal contamination while maintaining wafer smoothness by contacting the wafer substrates with a cleaning composition comprising an aqueous, metal ion-free base and an amphoteric surfactant and optionally a metal complexing agent and a propylene glycol ether organic solvent.

  在保持晶片平滑度的同时清除晶片基板上的金属污染物的工艺，方法是将晶片基板与清洗组合物接触，该组合物包括不含金属离子的水基和两性表面活性剂，以及可选的金属络合剂和丙二醇醚有机溶剂。
• AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE
  申请人：JSR Corporation

  公开号：EP2131389A1

  公开（公告）日：2009-12-09

  A chemical mechanical polishing aqueous dispersion includes (A) colloidal silica having an average particle size calculated from the specific surface area determined by the BET method of 10 to 60 nm, (B) an organic acid having two or more carboxyl groups and one or more hydroxyl groups in one molecule, and (C) a quaternary ammonium compound shown by the following general formula (1), wherein R1 to R4 individually represent hydrocarbon groups, and M- represents an anion, the chemical mechanical polishing aqueous dispersion having a pH of 3 to 5.

  一种化学机械抛光水分散液包括：(A) 胶体二氧化硅，其平均粒径根据 BET 法测定的比表面积计算为 10 至 60 纳米；(B) 有机酸，其一个分子中含有两个或两个以上的羧基和一个或一个以上的羟基；(C) 季铵化合物，其通式如下(1)、 其中 R1 至 R4 分别代表烃基，M- 代表阴离子，化学机械抛光水分散液的 pH 值为 3 至 5。
• Improved polycrystalline texturing composition and method
  申请人：Rohm and Haas Electronic Materials LLC

  公开号：EP2514799A1

  公开（公告）日：2012-10-24

  An aqueous acidic composition which includes alkaline compounds, fluoride ions and oxidizing agents is provided for texturing polycrystalline semiconductors. Methods for texturing are also disclosed. The textured polycrystalline semiconductors have reduced reflectance of light incidence.

  提供了一种酸性水溶液组合物，其中包括碱性化合物、氟离子和氧化剂，用于多晶半导体的制绒。此外，还公开了制绒方法。经过制绒的多晶半导体可降低入射光的反射率。
• Cleaning agent for a semi-conductor substrate
  申请人：WAKO PURE CHEMICAL INDUSTRIES, LTD.

  公开号：US20020016272A1

  公开（公告）日：2002-02-07

  This invention relates to a cleaning agent for a semi-conductor substrate, particularly, one having copper wirings on its surface, comprising a nonionic surfactant and a method for cleaning the same. The said cleaning agent and the method have made it possible to control a speed of etching on silicone oxide so as to remove impurities adsorbed on copper wirings and silicone oxide on a surface of a semi-conductor substrate having copper wirings on its surface, such as copper oxides and particles, without causing corrosion or oxidation of copper wirings nor causing roughness on the surface.

  本发明涉及一种用于半导体衬底，特别是表面有铜线的衬底的清洗剂，包括一种非离子表面活性剂和一种清洗方法。 上述清洗剂和方法可以控制对氧化硅的蚀刻速度，从而去除吸附在表面有铜线的半导体基板表面的铜线和氧化硅上的杂质，如铜氧化物和颗粒，而不会造成铜线的腐蚀或氧化，也不会造成表面粗糙。