[EN] GROUP 11 MONO-METALLIC PRECURSOR COMPOUNDS AND USE THEREOF IN METAL DEPOSITION<br/>[FR] COMPOSÉS PRÉCURSEURS MONOMÉTALLIQUES DU GROUPE 11 ET UTILISATION DE CEUX-CI DANS LE DÉPÔT DE MÉTAL
申请人:GREENCT CANADA
公开号:WO2012155264A1
公开(公告)日:2012-11-22
The present application provides precursor compounds useful for deposition of a group 11 metal on a substrate, for example, a microelectronic device substrate, as well as methods of synthesizing such precursor compounds. The precursor compounds provided are mono-metallic compounds comprising a diaminocarbene (DAC) having the general formula: DAC - M - X. Where the diaminocarbene is an optionally substituted, saturated N-heterocyclic diaminocarbene (sNHC) or an optionally substituted acyclic diaminocarbene, M is a group 11 metal, such as copper, silver or gold; and X is an anionic ligand. Also provided are methods of synthesizing the precursor compounds, metal deposition methods utilizing such precursor compounds, and to composite materials, such as, e.g., microelectronic device structures, and products formed by use of such precursors and deposition methods.
本申请提供了用于在基底上沉积11族金属的前体化合物,例如微电子器件基底,以及合成这种前体化合物的方法。所提供的前体化合物是包含有一种具有一般式的二氨基卡宾(DAC)的单金属化合物:DAC - M - X。其中,二氨基卡宾是一种可选择取代的饱和N-杂环二氨基卡宾(sNHC)或可选择取代的非环二氨基卡宾,M是11族金属,如铜、银或金;X是一种阴离子配体。还提供了合成前体化合物的方法,利用这种前体化合物的金属沉积方法,以及复合材料,例如微电子器件结构,以及通过使用这种前体和沉积方法形成的产品。