申请人:AIR PRODUCTS AND CHEMICALS, INC.
公开号:US20150087139A1
公开(公告)日:2015-03-26
Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below:
In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.
本文描述了形成含硅膜的前体和方法。在一个方面,该前体包括以下公式A至E中的一个所代表的化合物:
在一个特定实施例中,有机氨基硅烷前体对于低温(例如,350°C或更低)、原子层沉积(ALD)或等离子增强原子层沉积(PEALD)形成含硅膜是有效的。此外,本文还描述了一种组合物,其中包括本文描述的有机氨基硅烷,其中该有机氨基硅烷基本上不含有来自胺、卤素(例如,Cl、F、I、Br)、较高分子量物种和微量金属中至少一种的物质。