N,N-diethylethanamine;1-oxidopyridin-1-ium

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 吡啶及其衍生物
• 英文名称: N,N-diethylethanamine;1-oxidopyridin-1-ium
• 化学式: C11H20N2O
• 分子量: 196.29
• InChiKey: NJHWPUBMEGQTHP-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.67
• 重原子数：
  14
• 可旋转键数：
  3
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.55
• 拓扑面积：
  28.7
• 氢给体数：
  0
• 氢受体数：
  2

文献信息

• Method for manufacturing organic processing fluid for patterning of chemical amplification type resist film, organic processing fluid for patterning of chemical amplification type resist film, pattern forming method, method for manufacturing electronic device, and electronic device
  申请人：FUJIFILM Corporation

  公开号：US10088752B2

  公开（公告）日：2018-10-02

  There is disclosed a method for manufacturing an organic processing fluid for patterning of a chemical amplification type resist film, comprising a step of causing a fluid containing an organic solvent to pass through a filtration device having a fluid input portion, a fluid output portion, and a filtration filter film provided in a flow path that connects the fluid input portion and the fluid output portion with each other, wherein an absolute value (|TI−To|) of a difference between a temperature (TI) of the fluid in the fluid input portion and a temperature (To) of the fluid in the fluid output portion is 3° C. or lower, a filtration speed of the fluid in the filtration device is 0.5 L/min/m2 or greater, and a filtration pressure by the fluid in the filtration device is 0.10 MPa or lower.

  本发明公开了一种用于化学放大型抗蚀剂薄膜图案化的有机加工液的制造方法，包括使含有有机溶剂的流体通过过滤装置的步骤，该过滤装置具有流体输入部分、流体输出部分以及在流体输入部分和流体输出部分相互连接的流路中提供的过滤薄膜，其中流体输入部分中流体的温度(TI)与流体输出部分中流体的温度(To)之差的绝对值(|TI-To|)为3℃或更低，流体在过滤装置中的过滤速度为0.5升/分钟/平方米或更大，流体在过滤装置中的过滤压力为0.10兆帕或更大。或更低，流体在过滤装置中的过滤速度为 0.5 升/分钟/平方米或更高，流体在过滤装置中的过滤压力为 0.10 兆帕或更低。
• PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD OF MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20150111154A1

  公开（公告）日：2015-04-23

  There is provided a pattern forming method including: (a) a process of forming a film by resin (P) having a repeating unit (a) having a cyclic structure and a partial structure represented by the following Formula (I), (II-1) or (II-2), and a repeating unit (b) having a group which decomposes by the action of an acid to generates a polar group, and an actinic ray-sensitive or radiation-sensitive resin composition containing compound (B) which generates acid upon irradiation with an actinic ray or radiation; (b) a process of exposing the film; and (c) a process of forming a negative-type pattern by performing development using a developer including an organic solvent, an actinic ray-sensitive or radiation-sensitive resin composition used therefor, a resist film, a method of manufacturing an electronic device, and an electronic device.
• METHOD FOR MANUFACTURING ORGANIC PROCESSING FLUID FOR PATTERNING OF CHEMICAL AMPLIFICATION TYPE RESIST FILM, ORGANIC PROCESSING FLUID FOR PATTERNING OF CHEMICAL AMPLIFICATION TYPE RESIST FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20160026088A1

  公开（公告）日：2016-01-28

  There is disclosed a method for manufacturing an organic processing fluid for patterning of a chemical amplification type resist film, comprising a step of causing a fluid containing an organic solvent to pass through a filtration device having a fluid input portion, a fluid output portion, and a filtration filter film provided in a flow path that connects the fluid input portion and the fluid output portion with each other, wherein an absolute value (|T I −T o |) of a difference between a temperature (T I ) of the fluid in the fluid input portion and a temperature (T o ) of the fluid in the fluid output portion is 3° C. or lower, a filtration speed of the fluid in the filtration device is 0.5 L/min/m 2 or greater, and a filtration pressure by the fluid in the filtration device is 0.10 MPa or lower.
• ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, METHOD OF PRODUCING ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, STORAGE CONTAINER OF ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD OF PRODUCING ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20170184973A1

  公开（公告）日：2017-06-29

  An organic treatment liquid for patterning a resist film, in which a metal element concentration of each of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn is 3 ppm or less and which can reduce generation of particles, in a negative tone pattern forming method for forming a miniaturized (for example, 30 nm node or less) pattern by particularly using an organic developer, a method of producing the organic treatment liquid for patterning a resist film, a storage container of the organic treatment liquid for patterning a resist film, a pattern forming method using the same, and a method of producing an electronic device can be provided.
• [EN] ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE USING THE SAME<br/>[FR] COMPOSITION DE RÉSINE SENSIBLE AUX RAYONS ACTINIQUES OU SENSIBLE AU RAYONNEMENT, PELLICULE RÉSISTANTE L'UTILISANT, PROCÉDÉ DE FORMATION DE MOTIF ET PROCÉDÉ DE FABRICATION DE DISPOSITIF ÉLECTRONIQUE ET DISPOSITIF L'UTILISANT
  申请人：FUJIFILM CORP

  公开号：WO2014017618A1

  公开（公告）日：2014-01-30

  There is provided an actinic ray-sensitive or radiation-sensitive resin composition including: (A) a resin having a repeating unit having a group capable of decomposing by the action of an acid to generate a polar group; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and (C) a component containing at least one of: a compound having at least one of a fluorine atom and a silicon atom and having basicity or capable of increasing the basicity by the action of an acid, and a resin having a CH3 partial structure in a side chain moiety and having a basicity or capable of increasing the basicity by the action of an acid, wherein a content of the repeating unit having a group capable of decomposing by the action of an acid to generate a polar group is 55% by mole or more based on a whole repeating units of the resin (A).