2-Chloro-3-chlorooxycarbonylbenzoic acid

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 2-Chloro-3-chlorooxycarbonylbenzoic acid
• 英文别名: 2-chloro-3-chlorooxycarbonylbenzoic acid
• 化学式: C₈H₄Cl₂O₄
• 分子量: 235.02
• InChiKey: FSSGQVIBCKUIBJ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.7
• 重原子数：
  14
• 可旋转键数：
  2
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  63.6
• 氢给体数：
  1
• 氢受体数：
  4

文献信息

• FILM-FORMING COMPOSITION INCLUDING FLUORINE-CONTAINING SURFACTANT
  申请人：Nissan Chemical Industries, Ltd.

  公开号：EP3106921A1

  公开（公告）日：2016-12-21

  There is provided a film with reduced formation of an edge reservoir at a periphery of a film in which the edge reservoir causes an unnecessary residue that cannot be removed by an etching process, and a method for forming the film. A film forming composition for use in a lithography process, the film forming composition comprising a surfactant containing a polymer and an oligomer having a C3-5 perfluoroalkyl partial structure. The perfluoroalkyl partial structure preferably has a carbon number of 4. The perfluoroalkyl partial structure may further include an alkyl partial structure, and the polymer and the oligomer are preferably a (meth)acrylate polymer and a (meth)acrylate oligomer, respectively. The surfactant is contained in an amount of 0.0001% by mass to 1.5% by mass based on the total solid content of the film forming composition. The film forming composition further comprises a coating film resin, and the coating film resin is a novolac resin, a condensation epoxy resin, a (meth)acylic resin, a polyether-based resin, or a silicon-containing resin, etc. The formed film can be used as a resist underlayer film or a resist overlayer film.

  本发明提供了一种可减少在薄膜外围形成边缘储层的薄膜，在这种薄膜中，边缘储层会造成无法通过蚀刻工艺去除的不必要残留物，本发明还提供了一种用于形成该薄膜的方法。一种用于光刻工艺的成膜组合物，该成膜组合物包含一种表面活性剂，其中含有一种聚合物和一种具有 C3-5 全氟烷基部分结构的低聚物。全氟烷基部分结构的碳原子数最好为 4。全氟烷基部分结构可进一步包括烷基部分结构，聚合物和低聚物最好分别为（甲基）丙烯酸酯聚合物和（甲基）丙烯酸酯低聚物。根据成膜组合物的总固体含量，表面活性剂的含量为 0.0001%（质量百分比）至 1.5%（质量百分比）。成膜组合物还包括涂膜树脂，涂膜树脂为酚醛树脂、缩合环氧树脂、（甲基）酰基树脂、聚醚基树脂或含硅树脂等。形成的薄膜可用作抗蚀剂底层薄膜或抗蚀剂覆盖层薄膜。
• RESIST UNDERLAYER FILM-FORMING COMPOSITION FOR EUV LITHOGRAPHY CONTAINING CONDENSATION POLYMER
  申请人：Sakamoto Rikimaru

  公开号：US20140170567A1

  公开（公告）日：2014-06-19

  There is provided a resist underlayer film composition for EUV lithography that is used in a device production process using EUV lithography, reduces adverse effects of EUV, and is effective for obtaining a good resist pattern, and to a method for forming a resist pattern that uses the resist underlayer film composition for EUV lithography. A resist underlayer film-forming composition for EUV lithography, including: a polymer having a repeating unit structure of formula (1): [where each of A 1 , A 2 , A 3 , A 4 , A 5 , and A 6 is a hydrogen atom, a methyl group, or an ethyl group; X 1 is formula (2), formula (3), formula (4), or formula (0): Q is formula (5) or formula (6): and a solvent. A resist underlayer film-forming composition for EUV lithography, comprising: the polymer having the repeating unit structure of formula (1); a crosslinkable compound; and a solvent.
• FILM FORMING COMPOSITION CONTAINING FLUORINE-CONTAINING SURFACTANT
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20160347965A1

  公开（公告）日：2016-12-01

  A film with reduced formation of an edge reservoir at a periphery of a film in which the edge reservoir causes an unnecessary residue that cannot be removed by an etching process, and a method for forming the film. A film forming composition for use in a lithography process includes a surfactant containing a polymer and an oligomer having a C 3-5 perfluoroalkyl partial structure. The perfluoroalkyl partial structure may further include an alkyl partial structure. The surfactant is contained in an amount of 0.0001% by mass to 1.5% by mass based on the total solid content of the film forming composition. The film forming composition further includes a coating film resin, the coating film resin is a novolac resin, a condensation epoxy resin, a (meth)acylic resin, a polyether-based resin, or a silicon-containing resin, etc. The formed film can be used as a resist underlayer film or a resist overlayer film.
• US9240327B2
  申请人：——

  公开号：US9240327B2

  公开（公告）日：2016-01-19