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2-Methyl-1-[2,4,6-tri(propan-2-yl)phenoxy]propan-2-ol

中文名称
——
中文别名
——
英文名称
2-Methyl-1-[2,4,6-tri(propan-2-yl)phenoxy]propan-2-ol
英文别名
2-methyl-1-[2,4,6-tri(propan-2-yl)phenoxy]propan-2-ol
2-Methyl-1-[2,4,6-tri(propan-2-yl)phenoxy]propan-2-ol化学式
CAS
——
化学式
C19H32O2
mdl
——
分子量
292.5
InChiKey
CRRDBPVKGVZXFV-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    5.2
  • 重原子数:
    21
  • 可旋转键数:
    6
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    0.68
  • 拓扑面积:
    29.5
  • 氢给体数:
    1
  • 氢受体数:
    2

文献信息

  • Pattern forming method, composition kit and resist film, manufacturing method of electronic device using these, and electronic device
    申请人:FUJIFILM Corporation
    公开号:US10031419B2
    公开(公告)日:2018-07-24
    There is provided a pattern forming method comprising (i) forming a film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition which contains (A) a resin which decomposes due to an action of an acid to change its solubility with respect to a developer and (C) a specific resin, (ii) forming a top coat layer using a top coat composition which contains a resin (T) on the film, (iii) exposing the film which has the top coat layer to actinic rays or radiation, and (iv) forming a pattern by developing the film which has the top coat layer after the exposing.
    本发明提供了一种图案形成方法,包括(i)使用感光树脂组合物或辐射敏感树脂组合物在基底上形成胶片,该组合物包含(A)由于酸的作用而分解,从而改变其相对于显影剂的溶解度的树脂和(C)特定树脂、(ii) 使用含有树脂 (T) 的表层组合物在胶片上形成表层,(iii) 将具有表层的胶片暴露于放 射线或辐射,(iv) 在暴露后对具有表层的胶片进行显影,形成图案。
  • ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN
    申请人:FUJIFILM CORPORATION
    公开号:US20140227636A1
    公开(公告)日:2014-08-14
    Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (Aa) containing at least one repeating unit (Aa1) derived from monomers of general formula (aa1-1) below and at least one repeating unit (Aa2) derived from monomers of general formula (aa2-1) below and comprising a resin (Ab) that when acted on by an acid, changes its alkali solubility.
  • US20140342275A1
    申请人:——
    公开号:US20140342275A1
    公开(公告)日:2014-11-20
  • ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
    申请人:FUJIFILM Corporation
    公开号:US20150132687A1
    公开(公告)日:2015-05-14
    There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin containing a repeating unit represented by the specific formula (1) and a repeating unit represented by the specific formula (A); a resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition; a pattern forming method comprising (i) a step of forming a film from the actinic ray-sensitive or radiation-sensitive resin composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using a developer to form a pattern; a method for manufacturing an electronic device, comprising the pattern forming method, and an electronic device manufactured by the manufacturing method of an electronic device.
  • PATTERN FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RAY-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE USING THE SAME
    申请人:FUJIFILM CORPORATION
    公开号:US20150168834A1
    公开(公告)日:2015-06-18
    There is provided a pattern forming method, including: (a) forming a film by using an electron beam-sensitive or extreme ultraviolet ray-sensitive resin composition containing a resin (A) having a repeating unit represented by Formula (1-0) and a repeating unit represented by Formula (1-2); (b) exposing the film by using an electron beam or extreme ultraviolet ray; and (c) developing the exposed film by using a developer containing an organic solvent to form a negative pattern, wherein a content of the repeating unit represented by Formula (1-0) is 45 mol % or more based on a whole repeating units in the resin (A).
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