2,4,5,7,10-Pentakis(methoxymethyl)anthracene-1,8,9-triol

• 分子结构分类: 有机化合物 - 苯类化合物 - 蒽
• 英文名称: 2,4,5,7,10-Pentakis(methoxymethyl)anthracene-1,8,9-triol
• 英文别名: 2,4,5,7,10-pentakis(methoxymethyl)anthracene-1,8,9-triol
• 化学式: C₂₄H₃₀O₈
• 分子量: 446.5
• InChiKey: RNRFGFQJBQSMLH-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.2
• 重原子数：
  32
• 可旋转键数：
  10
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.42
• 拓扑面积：
  107
• 氢给体数：
  3
• 氢受体数：
  8

文献信息

• Composition for film formation, film, resist underlayer film-forming method, production method of patterned substrate, and compound
  申请人：JSR CORPORATION

  公开号：US11003079B2

  公开（公告）日：2021-05-11

  The composition for film formation includes a compound including a group of the formula (1) and a solvent. In the formula (1), R1 to R4 each independently represent a hydrogen atom, a monovalent organic group having 1 to 20 carbon atoms, or R1 to R4 taken together represent a cyclic structure having 3 to 20 ring atoms together with the carbon atom or a carbon chain to which R1 to R4 bond. Ar1 represents a group obtained by removing (n+3) hydrogen atoms from an aromatic ring of an arene having 6 to 20 carbon atoms. n is an integer of 0 to 9. R5 represents a hydroxy group, a halogen atom, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms.

  用于成膜的组合物包括一种包括式（1）基团的化合物和一种溶剂。在式 (1) 中，R1 至 R4 各自独立地代表氢原子、具有 1 至 20 个碳原子的一价有机基团，或 R1 至 R4 合在一起代表具有 3 至 20 个环原子的环状结构以及 R1 至 R4 所键合的碳原子或碳链。Ar1 代表通过从具有 6 至 20 个碳原子的芳香环中移除 (n+3) 个氢原子而得到的基团，n 为 0 至 9 的整数。R5 代表羟基、卤素原子、硝基或具有 1 至 20 个碳原子的一价有机基团。
• Composition for resist underlayer film formation, resist underlayer film and forming method thereof, production method of patterned substrate, and compound
  申请人：JSR CORPORATION

  公开号：US11126084B2

  公开（公告）日：2021-09-21

  A composition for resist underlayer film formation contains a compound having a group represented by formula (1), and a solvent. R1 represents an organic group having 2 to 10 carbon atoms and having a valency of (m+n), wherein the carbon atoms include two carbon atoms that are adjacent to each other, with a hydroxy group or an alkoxy group bonding to one of the two carbon atoms, and with a hydrogen atom bonding to another of the two carbon atoms; L1 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group; R2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; n is an integer of 1 to 3; * denotes a bonding site to a moiety other than the group represented by the formula (1) in the compound; and m is an integer of 1 to 3.

  一种用于形成抗蚀剂底层膜的组合物含有一种具有式（1）所代表基团的化合物和一种溶剂。R1 代表具有 2 至 10 个碳原子且化合价为（m+n）的有机基团，其中碳原子包括两个相邻的碳原子，羟基或烷氧基与这两个碳原子中的一个键合，氢原子与这两个碳原子中的另一个键合；L1 代表乙炔二基或取代或未取代的乙烯二基； R2 代表氢原子或具有 1 至 20 个碳原子的一价有机基团； n 是 1 至 3 的整数； * 表示与化合物中除式 (1) 所代表的基团以外的其他分子的键合位点；以及 m 是 1 至 3 的整数。
• Composition for resist underlayer film formation, resist underlayer film and formation method thereof, and patterned substrate production method
  申请人：JSR CORPORATION

  公开号：US11243468B2

  公开（公告）日：2022-02-08

  A composition for resist underlayer film formation contains: a compound having a partial structure represented by the following formula (1); and a solvent. In the formula (1): X represents a group represented by formula (i), (ii), (iii) or (iv). In the formula (i): R1 and R2 each independently represent a hydrogen atom, a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms, or a substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms provided that at least one of R1 and R2 represents the substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms or the substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms; or R1 and R2 taken together represent a part of a ring structure having 3 to 20 ring atoms together with the carbon atom to which R1 and R2 bond.

  一种用于形成抗蚀剂底层薄膜的组合物包含：具有下式（1）所代表的部分结构的化合物；以及溶剂。在式 (1) 中X 代表由式(i)、(ii)、(iii)或(iv)表示的基团。在式 (i) 中R1 和 R2 各自独立地代表氢原子、具有 1 至 20 个碳原子的取代或未取代的一价脂 族烃基或具有 7 至 20 个碳原子的取代或未取代的芳烷基，条件是 R1 和 R2 中至少 有一个代表具有 1 至 20 个碳原子的取代或未取代的一价脂族烃基或具有 7 至 20 个碳原子 的取代或未取代的芳烷基；或 R1 和 R2 合在一起代表具有 3 至 20 个环原子的环状结构的一部分，以及 R1 和 R2 键合的碳原子。
• Composition for resist underlayer film formation, resist underlayer film and method for forming the same, and production method of a patterned substrate
  申请人：JSR CORPORATION

  公开号：US11215928B2

  公开（公告）日：2022-01-04

  A composition for resist underlayer film formation contains: a first compound including at least one oxazine structure fused to an aromatic ring; and a solvent. The first compound preferably includes a partial structure represented by formula (1). In formula (1), R2 to R5 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; Ar1 represents a group obtained by removing (n+3) or (n+2) hydrogen atoms on the aromatic ring from an arene having 6 to 20 carbon atoms; R6 represents a hydroxy group, a halogen atom, a nitro group or a monovalent organic group having 1 to 20 carbon atoms; and n is an integer of 0 to 9.

  一种用于形成抗蚀剂底层薄膜的组合物含有：第一种化合物，其中包括至少一种与芳香环融合的噁嗪结构；以及一种溶剂。第一种化合物最好包括由式（1）表示的部分结构。在式 (1) 中，R2 至 R5 各自独立地代表氢原子或具有 1 至 20 个碳原子的一价有机基团；Ar1 代表通过从具有 6 至 20 个碳原子的芳香环上除去 (n+3) 或 (n+2) 个氢原子而得到的基团；R6 代表羟基、卤素原子、硝基或具有 1 至 20 个碳原子的一价有机基团；以及 n 是 0 至 9 的整数。
• US20140272722A1
  申请人：——

  公开号：US20140272722A1

  公开（公告）日：2014-09-18