4-(4-Butan-2-ylphenoxy)benzenesulfonic acid

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 4-(4-Butan-2-ylphenoxy)benzenesulfonic acid
• 英文别名: 4-(4-butan-2-ylphenoxy)benzenesulfonic acid
• 化学式: C₁₆H₁₈O₄S
• 分子量: 306.4
• InChiKey: ORAFJLBQOZCWNR-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.9
• 重原子数：
  21
• 可旋转键数：
  5
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.25
• 拓扑面积：
  72
• 氢给体数：
  1
• 氢受体数：
  4

文献信息

• ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE
  申请人：FUJIFILM CORPORATION

  公开号：US20150185612A1

  公开（公告）日：2015-07-02

  There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising: (A) a resin having a repeating unit represented by the specific formula and a group capable of decomposing by an action of an acid to produce a polar group; and an ionic compound represented by the specific formula, and a resist film comprising the actinic ray-sensitive or radiation-sensitive resin composition.

  提供一种光致射线敏感或辐射敏感的树脂组合物，包括：（A）具有特定公式表示的重复单元和能够通过酸作用分解产生极性基团的基团的树脂；以及具有特定公式表示的离子化合物，以及包括该光致射线敏感或辐射敏感的树脂组合物的抗蚀膜。
• US20140272692A1
  申请人：——

  公开号：US20140272692A1

  公开（公告）日：2014-09-18
• US20140342275A1
  申请人：——

  公开号：US20140342275A1

  公开（公告）日：2014-11-20
• ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM, METHOD OF FORMING PATTERN, PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20150118628A1

  公开（公告）日：2015-04-30

  Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (P) comprising any of repeating units (A) of general formula (I) below, each of which contains an ionic structural moiety that when exposed to actinic rays or radiation, is decomposed to thereby generate an acid in a side chain of the resin.
• PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, ELECTRONIC DEVICE, BLOCK COPOLYMER AND BLOCK COPOLYMER PRODUCTION METHOD
  申请人：FUJIFILM Corporation

  公开号：US20160291461A1

  公开（公告）日：2016-10-06

  There are provided a pattern forming method in which, in self-organization lithography using a graphoepitaxy method, high miniaturization of patterns can be achieved with high quality and high efficiency by a pattern forming method including (i) a step of forming a block copolymer layer containing a specific first block copolymer or a specific second block copolymer on a specific substrate, (ii) a step of phase-separating the block copolymer layer, and (iii) a step of selectively removing at least one phase of a plurality of phases of the block copolymer layer, an electronic device manufacturing method using the pattern forming method and the electronic device, and a block copolymer used in the pattern forming method and the production method thereof.