Methanol;triphenylphosphane

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: Methanol;triphenylphosphane
• 英文别名: methanol;triphenylphosphane
• 化学式: C19H19OP
• 分子量: 294.3
• InChiKey: JDAAUNZGUMEYOL-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.05
• 重原子数：
  21
• 可旋转键数：
  3
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.05
• 拓扑面积：
  20.2
• 氢给体数：
  1
• 氢受体数：
  1

文献信息

• Post chemical mechanical polishing formulations and method of use
  申请人：ENTEGRIS, INC.

  公开号：US10351809B2

  公开（公告）日：2019-07-16

  A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

  一种清洗组合物和工艺，用于清洗微电子设备上的化学机械抛光（CMP）后残留物和污染物。该清洗组合物基本上不含碱氢氧化物、碱土金属氢氧化物和四甲基氢氧化铵。这种组合物能高效清洗微电子器件表面的 CMP 后残留物和污染物，而不会损害低 K 介电材料或铜互连材料。
• Tungsten post-CMP cleaning composition
  申请人：ENTEGRIS, INC.

  公开号：US10988718B2

  公开（公告）日：2021-04-27

  A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and particles from a microelectronic device having said particles and contaminants thereon. The removal compositions include at least one at least one organic additive; at least one metal chelating agent; and at least one polyelectrolyte. The composition achieves highly efficacious removal of the particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, and metal containing layers such as tungsten-containing layers.

  一种清除组合物和工艺，用于清除微电子器件上的化学机械抛光（CMP）后污染物和微粒，该器件上有上述微粒和污染物。清除组合物包括至少一种有机添加剂、至少一种金属螯合剂和至少一种聚电解质。该组合物能高效去除微电子器件表面的颗粒和 CMP 杂质材料，而不会损害低介电、氮化硅和含金属层（如含钨层）。
• Post chemical mechanical polishing cleaning compositions
  申请人：ENTEGRIS, INC.

  公开号：US11124740B2

  公开（公告）日：2021-09-21

  A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP by-product contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.

  一种清除组合物和工艺，用于清除微电子器件上的化学机械抛光（CMP）后污染物和铈微粒。该组合物能高效去除微电子器件表面的铈颗粒和 CMP 副产物污染物，而不会损害低介电、氮化硅或含钨材料。
• Post CMP cleaning composition
  申请人：ENTEGRIS, INC.

  公开号：US11124746B2

  公开（公告）日：2021-09-21

  The disclosure generally relates to a composition and process for cleaning residue and/or contaminants from microelectronic devices having said residue and contaminants thereon. The residue may include post-CMP, post-etch, and/or post-ash residue. The compositions and methods are particularly advantageous when cleaning a microelectronic surface comprising copper, low-k dielectric materials, and barrier materials comprising at least one of tantalum-containing material, cobalt-containing material, tantalum-containing, tungsten-containing, and ruthenium-containing material.

  本公开内容一般涉及一种组合物和工艺，用于清洗微电子设备上的残留物和/或污染物。残留物可包括 CMP 后、蚀刻后和/或冲洗后残留物。本发明的组合物和方法在清洁由铜、低介电材料和至少一种含钽材料、含钴材料、含钽材料、含钨材料和含钌材料组成的阻挡层材料构成的微电子表面时特别有利。
• Cleaning composition with corrosion inhibitor
  申请人：ENTEGRIS, INC.

  公开号：US11149235B2

  公开（公告）日：2021-10-19

  A cleaning composition and process for cleaning an in-process microelectronic device substrate, e.g., by post-chemical mechanical polishing (CMP) cleaning, to remove residue from a surface thereof, wherein the cleaning composition may be especially effective for cleaning a substrate surface that includes exposed metal such as cobalt, copper, or both, along with dielectric or low k dielectric material, and wherein the cleaning composition includes corrosion inhibitor to inhibit corrosion of the exposed metal.

  一种清洁组合物和工艺，用于清洁在制品微电子器件基板，例如通过化学机械抛光（CMP）后清洁，以去除其表面的残留物，其中清洁组合物对于清洁基板表面特别有效，该基板表面包括暴露金属，例如钴、铜或两者，以及介电或低k介电材料，其中清洁组合物包括腐蚀抑制剂，以抑制暴露金属的腐蚀。