4-[(4-Methylphenyl)methyl]benzene-1,2,3-triol | 591756-33-1

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 4-[(4-Methylphenyl)methyl]benzene-1,2,3-triol
• CAS: 591756-33-1
• 化学式: C₁₄H₁₄O₃
• 分子量: 230.26
• InChiKey: XIWDLICFXKBYAZ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.1
• 重原子数：
  17
• 可旋转键数：
  2
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.14
• 拓扑面积：
  60.7
• 氢给体数：
  3
• 氢受体数：
  3

文献信息

• BIS(AMINOPHENOL) DERIVATIVE, PROCESS FOR PRODUCING SAME, POLYAMIDE RESIN, POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, PROTECTIVE FILM, INTERLAYER DIELECTRIC FILM, SEMICONDUCTOR DEVICE, AND DISPLAY ELEMENT
  申请人：Terakawa Koji

  公开号：US20100044888A1

  公开（公告）日：2010-02-25

  A bis(aminophenol) derivative having substituents at positions adjacent to two amino groups is provided. The bis(aminophenol) derivative is used as a raw material of a polyamide resin for a positive-tone photosensitive resin composition. A polyamide resin comprising bis(aminophenol) and a structure derived from a carboxylic acid is also provided, the bis(aminophenol) having substituents at positions adjacent to the two amino groups. A positive-tone photosensitive resin composition comprising a polybenzooxazole precursor resin, exhibiting high sensitivity and a high cyclization rate even when cured at a low temperature is provided. Also provided is a positive-tone photosensitive resin composition comprising a polyamide resin having an imide structure, an imide precursor structure, or an amide acid ester structure. The composition exhibits high sensitivity and produces a cured product having low water absorption even when cured at a low temperature.

  本发明提供了一种在两个氨基团相邻位置上具有取代基的双(氨基酚)衍生物。该双(氨基酚)衍生物用作聚酰胺树脂的原材料，用于制备正向感光树脂组合物。还提供了一种聚酰胺树脂，包括双(氨基酚)和由羧酸衍生的结构，其中双(氨基酚)在两个氨基团相邻位置上具有取代基。提供了一种正向感光树脂组合物，包括聚苯并噁唑前体树脂，即使在低温下固化，也表现出高灵敏度和高环化速率。还提供了一种正向感光树脂组合物，包括具有酰亚胺结构、酰亚胺前体结构或酰胺酸酯结构的聚酰胺树脂。该组合物表现出高灵敏度，即使在低温下固化，也能产生低吸水性的固化产物。
• POLYBENZOXAZOLE PRECURSOR, PHOTOSENSITIVE RESIN COMPOSITION USING THE SAME, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
  申请人：SATO Kenichiro

  公开号：US20080076849A1

  公开（公告）日：2008-03-27

  A polybenzoxazole precursor is represented by the following formula (1): wherein R 1 a to R 4 a, R 1 b to R 4 b, X 1 , Y 1 and m are defined in the specification.
• PHOTOSENSITIVE RESIN COMPOSITION, INSULATING FILM, PROTECTIVE FILM, AND ELECTRONIC EQUIPMENT
  申请人：Toyoda Hideyuki

  公开号：US20100076156A1

  公开（公告）日：2010-03-25

  The photosensitive resin composition of the present invention includes an alkali solubility resin including molecules each composed of a main chain having one end and the other end opposite to the one end, an organic group bonded to the one end thereof, the organic group having at least one unsaturated group, and a substituent group bonded to at least one of the other end of the main chain and a branch thereof, the substituent group having a cyclic chemical structure containing nitrogen atoms, and a photosensitive agent. Further, the insulating film of the present invention is composed of a cured product of the above photosensitive resin composition. Furthermore, the protective film of the present invention is composed of a cured product of the above photosensitive resin composition. Moreover, the Electronic equipment of the present invention is provided with the above protective film and insulating film.
• PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE
  申请人：Banba Toshio

  公开号：US20100183985A1

  公开（公告）日：2010-07-22

  A process for producing a semiconductor device includes a circuit formation step of forming circuit wiring on a semiconductor wafer using a chemically-amplified resist, and a cured film formation step of forming a cured film that protects the circuit wiring after forming the circuit wiring, the cured film being formed of a cured material of a photosensitive resin composition that comprises an alkali-soluble resin having a polybenzoxazole structure or a polybenzoxazole precursor structure, a compound that generates an acid upon exposure to light, and a solvent. The photosensitive resin composition substantially does not contain N-methyl-2-pyrrolidone. The process can suppress a T-top phenomenon or the like that may occur when forming a circuit on a semiconductor wafer using a chemically-amplified resist in the production of semiconductor devices.
• US7368205B2
  申请人：——

  公开号：US7368205B2

  公开（公告）日：2008-05-06