TITANIUM-ALUMINUM ALLOY DEPOSITION WITH TITANIUM-TETRAHYDROALUMINATE BIMETALLIC MOLECULES
申请人:I'Exploitation des Procedes Georges Claude L'Air Liquide, Societe Anonyme Pour I'Etude et
公开号:US20130295298A1
公开(公告)日:2013-11-07
Disclosed are titanium-tetrahydroaluminates precursors, their method of manufacture, and their use in the deposition of titanium-aluminum-containing films. The disclosed precursors have the formulae Ti(AlH
4
)
3
—X, Ti(AlH
4
)
2
L and Ti(AlH
4
)L
2
. The disclosed precursors may be used to deposit pure titanium-aluminum (TiAl), titanium-aluminum nitride (TiAlN), titanium-aluminum carbide (TiAlC), titanium-aluminum carbonitride (TiAlCN), titanium-aluminum silicide ((TiAl)Si), titanium-aluminum siliconitride ((TiAl)SiN), titanium-aluminum boron ((TiAl)B), titanium-aluminum boron nitride ((TiAl)BN), or titanium-aluminum oxide (TiAlO). or any other titanium-aluminum-containing films. The titanium-aluminum-containing films may be deposited using the disclosed precursors in thermal and/or plasma-enhanced CVD, ALD, pulse CVD or any other type of depositions methods.
本发明涉及钛四氢铝酸盐前体、其制备方法及其在沉积含钛铝薄膜中的应用。所披露的前体具有以下化学式:Ti(AlH4)3—X,Ti(AlH4)2L和Ti(AlH4)L2。所披露的前体可用于沉积纯钛铝(TiAl)、钛铝氮化物(TiAlN)、钛铝碳化物(TiAlC)、钛铝碳氮化物(TiAlCN)、钛铝硅化物((TiAl)Si)、钛铝硅氮化物((TiAl)SiN)、钛铝硼((TiAl)B)、钛铝硼氮化物((TiAl)BN)或钛铝氧化物(TiAlO)等任何含钛铝薄膜。可以使用所披露的前体在热化学气相沉积(CVD)、等离子增强化学气相沉积(PECVD)、原子层沉积(ALD)、脉冲化学气相沉积或任何其他类型的沉积方法中沉积含钛铝薄膜。