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bis(4-tert-butylphenylsulfonyl)diazomethane | 130290-80-1

中文名称
——
中文别名
——
英文名称
bis(4-tert-butylphenylsulfonyl)diazomethane
英文别名
1,1a(2)-[(Diazomethylene)bis(sulfonyl)]bis[4-(1,1-dimethylethyl)benzene];1-tert-butyl-4-[(4-tert-butylphenyl)sulfonyl-diazomethyl]sulfonylbenzene
bis(4-tert-butylphenylsulfonyl)diazomethane化学式
CAS
130290-80-1
化学式
C21H26N2O4S2
mdl
——
分子量
434.58
InChiKey
ZBZAGZCFEOTODC-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    5.9
  • 重原子数:
    29
  • 可旋转键数:
    6
  • 环数:
    2.0
  • sp3杂化的碳原子比例:
    0.38
  • 拓扑面积:
    87
  • 氢给体数:
    0
  • 氢受体数:
    5

文献信息

  • Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process
    申请人:——
    公开号:US20040167322A1
    公开(公告)日:2004-08-26
    A chemical amplification type resist composition comprising a specific benzenesulfonyldiazomethane containing a long-chain alkoxyl group at the 2-position on benzene ring has many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris left after coating, development and peeling, and improved pattern profile after development and is thus suited for microfabrication.
    一种化学放大型抗蚀组合物,包括在苯环上的2-位含有长链烷氧基基团的特定苯磺酰二氮甲烷,具有许多优点,包括提高分辨率,改善焦点宽度,即使在长期PED上也减少线宽变化或形状退化,涂层、显影和剥离后减少残留物,并在显影后改善图案轮廓,因此适用于微加工。
  • Photoacid generators, chemically amplified resist compositions, and patterning process
    申请人:Ohsawa Youichi
    公开号:US20070292768A1
    公开(公告)日:2007-12-20
    A photoacid generator has formula (1). A chemically amplified resist composition comprising the photoacid generator has advantages including a high resolution, focus latitude, long-term PED dimensional stability, and a satisfactory pattern profile shape. When the photoacid generator is combined with a resin having acid labile groups other than those of the acetal type, resolution and top loss are improved. The composition is suited for deep UV lithography.
    一种光酸发生剂的化学式为(1)。包括该光酸发生剂的化学增感抗蚀组合物具有诸如高分辨率、焦点宽度、长期PED尺寸稳定性和令人满意的图案轮廓形状等优点。当该光酸发生剂与具有除了缩醛类型以外的酸敏感基团的树脂结合时,可以改善分辨率和顶部损失。该组合物适用于深紫外光刻。
  • Resist composition and patterning process
    申请人:Watanabe Satoshi
    公开号:US20100009299A1
    公开(公告)日:2010-01-14
    The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F 2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.
    本发明涉及一种抗蚀组合物,例如用于在抗蚀物的基板侧边界面上提供优异图案轮廓的化学增感抗蚀组合物,除了在微细加工的光刻工艺中具有更高的分辨率外,特别是在采用KrF激光、ArF激光、F2激光、超短紫外光、电子束、X射线等作为曝光光源的光刻工艺中;以及利用该抗蚀组合物的图案化工艺。本发明提供一种化学增感抗蚀组合物,其包括一种或多种胺化合物或胺氧化合物(除了那些在芳香环的环结构中不含有胺或胺氧原子的氮原子的化合物),至少具有一个羧基,并且没有氢原子共价键结合到氮原子作为碱性中心。
  • POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
    申请人:NISHI Tsunehiro
    公开号:US20100062374A1
    公开(公告)日:2010-03-11
    A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising recurring units containing a non-leaving hydroxyl group represented by formula (1) wherein R 1 is H, methyl or trifluoromethyl, X is a single bond or methylene, m is 1 or 2, and the hydroxyl group attaches to a secondary carbon atom. The composition is improved in resolution when processed by lithography.
    一种正性光刻胶组合物包括(A)在酸的作用下在碱性显影剂中变得可溶的树脂组分和(B)酸发生剂。树脂(A)是一种聚合物,包含由式(1)表示的非离去羟基的重复单元,其中R1为H、甲基或三氟甲基,X为单键或亚甲基,m为1或2,并且羟基连接到次级碳原子。当通过光刻工艺处理时,该组合物在分辨率方面得到改善。
  • COMPOSITION CONTAINING VINYL-GROUP-CONTAINING COMPOUND
    申请人:TOKYO OHKA KOGYO CO., LTD.
    公开号:US20160046552A1
    公开(公告)日:2016-02-18
    A composition containing a novel vinyl-group-containing compound. This composition contains a vinyl-group-containing compound represented by general formula (1). In the formula: W 1 and W 2 represent a group represented by general formula (2) (where a ring (Z) is an aromatic hydrocarbon ring, X is a single bond or —S—, R 1 is a single bond or a C1-4 alkylene group, R 2 is a specific substituent group such as a monovalent hydrocarbon, and m is an integer equal to 0 or higher), a group represented by general formula (4) (where the ring (Z), X, R 1 , R 2 , and m are as previously stated), a hydroxyl group, or a (meth)acryloyloxy group; rings (Y 1 , Y 2 ) are aromatic hydrocarbon rings; R represents a single bond or a specific divalent group; R 3a and R 3b represent a cyano group, a halogen atom, or a monovalent hydrocarbon group; and n1 and n2 are integers of 0-4.
    这个组合物包含一种含有新颖乙烯基团的化合物。该组合物包含一个由通式(1)表示的含有乙烯基团的化合物。在该式中:W1和W2代表由通式(2)表示的一个基团(其中环(Z)是芳香烃环,X是一个单键或—S—,R1是一个单键或C1-4烷基基团,R2是特定的取代基团,如一价碳氢化合物,m是大于或等于0的整数),一个由通式(4)表示的基团(其中环(Z)、X、R1、R2和m如前述),一个羟基,或一个(甲基)丙烯酰氧基团;环(Y1、Y2)是芳香烃环;R代表一个单键或一个特定的二价基团;R3a和R3b代表氰基、卤素原子或一价碳氢基团;n1和n2是0-4的整数。
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