2,5-Dioxo-1-pyrrolidinyl benzenemethanesulfonate | 92614-58-9

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 2,5-Dioxo-1-pyrrolidinyl benzenemethanesulfonate
• 英文别名: (2,5-dioxopyrrolidin-1-yl) phenylmethanesulfonate
• CAS: 92614-58-9
• 化学式: C₁₁H₁₁NO₅S
• 分子量: 269.28
• InChiKey: GFLOMBRIXITJRE-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.3
• 重原子数：
  18
• 可旋转键数：
  4
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.27
• 拓扑面积：
  89.1
• 氢给体数：
  0
• 氢受体数：
  5

文献信息

• HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD
  申请人：Tanaka Yuko

  公开号：US20110198730A1

  公开（公告）日：2011-08-18

  A method of synthesizing a hyperbranched polymer by living radical polymerization of a monomer in the presence of a metal catalyst includes at least adding a compound or setting the amount of the monomer in the living radical polymerization. The compound added is at least a compound represented by R 1 -A or a compound represented by R 2 —B—R 3 , where R 1 denotes hydrogen, an alkyl group (1-10 carbons), aryl group (1-10 carbons), or aralkyl group (7-10 carbons), A denotes a cyano group, hydroxyl group, or nitro group, R 2 and R 3 denote hydrogen, alkyl groups (1-10 carbons), aryl groups (6-10 carbons), aralkyl groups (7-10 carbons), or dialkylamino groups (2-10 carbons), and B denotes a carbonyl group or sulfonyl group. Setting of the monomer amount includes setting the amount of monomer to be mixed into a reaction system at one mixing to be less than the total monomer to be mixed with the reaction system.

  在金属催化剂的存在下，通过活性自由基聚合合成超支化聚合物的方法，至少包括添加化合物或调整活性自由基聚合中单体的量。添加的化合物至少是由R1-A表示的化合物或由R2-B-R3表示的化合物，其中R1表示氢、烷基（1-10个碳）、芳基（1-10个碳）或芳基烷基（7-10个碳），A表示氰基、羟基或硝基，R2和R3表示氢、烷基（1-10个碳）、芳基（6-10个碳）、芳基烷基（7-10个碳）或二烷基氨基基团（2-10个碳），B表示羰基或磺酰基。单体量的调整包括将单体的量设置为在一次混合中混合到反应体系中的单体总量以下。
• HYPERBRANCHED POLYMER, PROCESS FOR PRODUCING THE SAME AND RESIST COMPOSITION CONTAINING THE HYPERBRANCHED POLYMER
  申请人：Lion Corporation

  公开号：EP1698645A1

  公开（公告）日：2006-09-06

  The present invention provides a hyperbranched polymer suitable as a polymer material for nanofabrication, in particular, photolithography. The hyperbranched polymer of the present invention is characterized by having a core portion prepared by a living radical polymerization of chloromethyl styrene or the like, and an acid decomposition group such as p-tert-butoxy styrene, which is linked to the core portion and present at the end of a molecule of the polymer.

  本发明提供了一种超支化聚合物，适用于纳米制造，特别是光刻技术的聚合物材料。本发明的超支化聚合物的特点是具有通过氯甲基苯乙烯或类似物的活自由基聚合制备的核心部分，以及与核心部分相连并存在于聚合物分子末端的酸分解基团（如对叔丁氧基苯乙烯）。
• MATERIAL FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD
  申请人：Fujitsu Limited

  公开号：EP2138897A1

  公开（公告）日：2009-12-30

  An object of the invention is to provide a material for forming a conductive antireflection film, which excels in an antistatic effect as well as suppressing a reflection of ultraviolet ray, is highly sensitive, and is capable of efficiently forming a fine resist pattern, wiring pattern, or the like at high resolution and low cast with a simple process without omission or dislocation of the pattern, by preventing accumulation of charges, even when an electron beam is used as exposure light. The material for forming a conductive antireflection film of the invention contains a base resin having conductivity, a crosslinking agent, a thermal acid generator, and a solvent.

  本发明的目的是提供一种用于形成导电减反射膜的材料，该材料具有优异的抗静电效果和抑制紫外线反射的效果，灵敏度高，即使在使用电子束作为曝光光的情况下，也能通过防止电荷积累，以高分辨率和低投射率有效地形成精细抗蚀图案、布线图案或类似图案，且工艺简单，图案无遗漏或错位。本发明用于形成导电减反射膜的材料包含具有导电性的基树脂、交联剂、热酸发生剂和溶剂。
• CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN
  申请人：Fujitsu Limited

  公开号：EP2138897B1

  公开（公告）日：2016-08-03
• Hyperbranched polymer, production method therefor and resist composition containing hyperbranched polymer
  申请人：Kaneko Yukihiro

  公开号：US20070148585A1

  公开（公告）日：2007-06-28

  The present invention provides a hyperbranched polymer suitable as a polymer material for nanofabrication, in particular, photolithography. The hyperbranched polymer of the present invention is characterized by having a core portion prepared by a living radical polymerization of chloromethyl styrene or the like, and an acid decomposition group such as p-tert-butoxy styrene, which is linked to the core portion and present at the end of a molecule of the polymer.