1,4-Bis-(α-hydroxy-isopropyl)-2,3,5,6-tetramethyl-benzol | 6555-89-1

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 1,4-Bis-(α-hydroxy-isopropyl)-2,3,5,6-tetramethyl-benzol
• 英文别名: 2-[4-(2-Hydroxypropan-2-yl)-2,3,5,6-tetramethylphenyl]propan-2-ol
• CAS: 6555-89-1
• 化学式: C₁₆H₂₆O₂
• 分子量: 250.381
• InChiKey: PUPVEEHGTBZHCV-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.8
• 重原子数：
  18
• 可旋转键数：
  2
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.62
• 拓扑面积：
  40.5
• 氢给体数：
  2
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  2,3,5,6-Tetramethyl-1,4-bis-(α-hydroxy-isopropyl)-bicyclo<2.2.0>hexadien-(2,5) 生成 1,4-Bis-(α-hydroxy-isopropyl)-2,3,5,6-tetramethyl-benzol
  参考文献：
  名称：

  Criegee,R.; Askani,R., Angewandte Chemie, 1966, vol. 78, p. 494 - 495

  摘要：

  DOI：

文献信息

• Photomask and manufacturing method of an electronic device therewith
  申请人：——

  公开号：US20020086222A1

  公开（公告）日：2002-07-04

  In the step of manufacturing a photomask, an opaque pattern is formed by using a photosensitive resin composition containing a specified light absorbent, which then used to manufacture a photomask for KrF excimer laser lithography in a short manufacturing time and at a reduced cost. Accordingly, the manufacturing time and the cost for semiconductor integrated circuit devices is reduced.

  在制造光掩膜的步骤中，通过使用含有特定光吸收剂的光敏树脂组合物形成不透明图案，然后用它来制造用于 KrF 准分子激光光刻的光掩膜，制造时间短，成本低。因此，半导体集成电路设备的制造时间和成本都得以降低。
• Photo mask
  申请人：——

  公开号：US20030129505A1

  公开（公告）日：2003-07-10

  Providing a photo mask for KrF excimer laser lithography, which can be produced with high accuracy and low defects in a smaller number of steps. A photo mask for KrF excimer laser lithography according to the present invention is one in which a resist pattern 18 efficiently absorbing a KrF excimer laser light (wavelength: about 248 nm) is formed directly on a quartz substrate 10. The resist pattern 18 comprises: an aqueous alkali-soluble resin having a high light shielding property, which incorporates a naphthol structure having at least one hydroxyl group bound to a naphthalene nucleus; or a radiation sensitive resist having, as a main component, an aqueous alkali-soluble resin containing a derivative of the above-mentioned aqueous alkali-soluble resin as a resin matrix.

  提供一种用于 KrF 准分子激光光刻的光掩膜，它可以用较少的步骤生产出高精度和低缺陷的光掩膜。根据本发明，用于 KrF 准分子激光光刻的光掩膜是一种抗蚀剂图案 18 在石英基底上直接形成能有效吸收 KrF 准分子激光（波长：约 248 纳米）的光刻胶图案 18。 10. 抗蚀图案 18 包括：具有高光屏蔽性能的水性碱溶性树脂，其中包含一个萘酚结构，该萘酚结构具有至少一个与萘核结合的羟基；或辐射敏感抗蚀剂，其主要成分为水性碱溶性树脂，其中含有上述水性碱溶性树脂的衍生物作为树脂基体。
• PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND MASK BLANK
  申请人：FUJIFILM Corporation

  公开号：US20170121437A1

  公开（公告）日：2017-05-04

  A pattern forming method includes forming a film using an actinic ray-sensitive or radiation-sensitive resin composition, exposing the film with active light or radiation, and developing the exposed film using a developer including an organic solvent, in which the actinic ray-sensitive or radiation-sensitive resin composition contains a compound having a partial structure represented by General Formula (I).
• US6790564B2
  申请人：——

  公开号：US6790564B2

  公开（公告）日：2004-09-14
• US7005216B2
  申请人：——

  公开号：US7005216B2

  公开（公告）日：2006-02-28