PHOTOSENSITIVE COMPOSITION FOR INTERLAYER DIELECTRIC AND METHOD OF FORMING PATTERNED INTERLAYER DIELECTRIC
申请人:AZ Electronic Materials (Japan) K.K.
公开号:EP1548499A1
公开(公告)日:2005-06-29
There is provided a photosensitive composition which possesses excellent storage stability and can yield an interlayer insulation film with an improved film thickness limit. The photosensitive composition comprises a modified polysilsesquiazane having a weight average molecular weight of 500 to 200,000 comprising basic constitutional units represented by formula -[SiR1(NR2)1.5]- wherein R1's each independently represent an alkyl group having 1 to 3 carbon atoms or a substituted or unsubstituted phenyl group; R2's each independently represent hydrogen, an alkyl group having 1 to 3 carbon atoms, or a substituted or unsubstituted phenyl group, up to 50% by mole of the basic constitutional units having been replaced by a linking group other than the silazane bond; and a photoacid generating agent.
本发明提供了一种光敏组合物,它具有优异的贮存稳定性,并能产生具有改进的膜厚度极限的层间绝缘膜。该光敏组合物包括一种改性聚硅烷基噻嗪,其重量平均分子量为 500 至 200,000,包含由式-[SiR1(NR2)1.5]-其中 R1 各自独立地代表具有 1 至 3 个碳原子的烷基或取代或未取代的苯基;R2 各自独立地代表氢、具有 1 至 3 个碳原子的烷基或取代或未取代的苯基,以摩尔计最多有 50%的基本构型单元被硅烷键以外的连接基团取代;以及一种光酸生成剂。