2,4,6-Trihydroxyisophthalsaeure | 1137-05-9

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 2,4,6-Trihydroxyisophthalsaeure
• 英文别名: 2,4,6-Trihydroxy-1,3-benzenedicarboxylic acid；2,4,6-trihydroxybenzene-1,3-dicarboxylic acid
• CAS: 1137-05-9
• 化学式: C₈H₆O₇
• 分子量: 214.131
• InChiKey: RCEALALDBBBQNC-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.6
• 重原子数：
  15
• 可旋转键数：
  2
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  135
• 氢给体数：
  5
• 氢受体数：
  7

文献信息

• Method of preventing polymer-scale formation
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP0320227A2

  公开（公告）日：1989-06-14

  A method of preventing polymer scales from sticking in a polymerization vessel during the polymerization of a monomer having an ethylenically double bond, wherein said polymerization is carried out in a polymerization vessel of which the inner wall and other parts with which said monomer comes into contact during polymerization are previously first coated with (a) a coating solution comprising a cationic dye and the resulting coating is then coated with (b) a coating solution comprising at least one component selected from the group consisting of anionic polymeric compounds, amphoteric polymeric compounds and hydroxyl group-containing organic compounds. Polymer scale formation can be effectively prevented.

  一种在具有乙烯双键的单体聚合过程中防止聚合物鳞片粘附在聚合容器中的方法，其中所述聚合在聚合容器中进行，聚合容器的内壁和在聚合过程中与所述单体接触的其他部分之前先涂有(a)由阳离子染料组成的涂层溶液，然后在所得涂层上涂有(b)由至少一种从阴离子聚合物化合物、两性聚合物化合物和含羟基有机化合物组成的组中选出的组分组成的涂层溶液。可有效防止聚合物结垢。
• COMPOSITION CONTAINING HYDROXYLATED CONDENSATION RESIN FOR FORMING FILM UNDER RESIST
  申请人：Nissan Chemical Industries, Ltd.

  公开号：EP2042927A1

  公开（公告）日：2009-04-01

  Disclosed is a lithographic composition for forming a resist underlayer film, which can be used as a lower layer antireflection film by which an exposure light striking on a photoresist formed on a semiconductor substrate is inhibited from being reflected from the substrate in a lithographic process of manufacturing semiconductor equipment, a planarization film for flattening a semiconductor substrate having a rugged surface used in order to fill in a hole formed on the semiconductor substrate, a film which prevents a photoresist from being contaminated by a substance generated from a semiconductor substrate during heating/burning, or the like. The lithographic composition for forming a resist underlayer comprises a polymer having a structure of formula (1): (where Y represents a C1-10 alkylene group or a C6-14 aromatic ring, provided that the alkylene group and the aromatic ring have one or more hydroxyl group(s) being not larger than the number of the replaceable hydrogen atom of the alkylene group and the aromatic ring); and a solvent.

  本发明公开了一种用于形成抗蚀剂底层膜的平版印刷组合物，该组合物可在制造半导体设备的平版印刷工艺中用作下层抗反射膜，通过该膜可以抑制照射在形成于半导体衬底上的光刻胶上的曝光光从衬底上反射出去；还可用作用于将表面凹凸不平的半导体衬底压平的平版印刷膜，以填充形成于半导体衬底上的孔洞；还可用作防止光刻胶在加热/燃烧过程中被半导体衬底产生的物质污染的膜等。用于形成抗蚀剂底层的平版印刷组合物包括具有式（1）结构的聚合物： (其中 Y 代表 C1-10 亚烷基或 C6-14 芳环，条件是亚烷基和芳环具有一个或多个羟基，其数目不大于亚烷基和芳环的可取代氢原子数）；以及溶剂。
• Composition containing hydroxylated condensation resin for forming resist underlayer film
  申请人：Hiroi Yoshiomi

  公开号：US20090317740A1

  公开（公告）日：2009-12-24

  Disclosed is a lithographic composition for forming a resist underlayer film, which can be used as a lower layer antireflection film by which an exposure light striking on a photoresist formed on a semiconductor substrate is inhibited from being reflected from the substrate in a lithographic process of manufacturing semiconductor equipment, a planarization film for flattening a semiconductor substrate having a rugged surface used in order to fill in a hole formed on the semiconductor substrate, a film which prevents a photoresist from being contaminated by a substance generated from a semiconductor substrate during heating/burning, or the like. The lithographic composition for forming a resist underlayer comprises a polymer having a structure of formula (1): (where Y represents a C 1-10 alkylene group or a C 6-14 aromatic ring, provided that the alkylene group and the aromatic ring have one or more hydroxyl group(s) being not larger than the number of the replaceable hydrogen atom of the alkylene group and the aromatic ring); and a solvent.
• US4057588A
  申请人：——

  公开号：US4057588A

  公开（公告）日：1977-11-08
• US4123461A
  申请人：——

  公开号：US4123461A

  公开（公告）日：1978-10-31