Benzyl(diethyl)sulfanium

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: Benzyl(diethyl)sulfanium
• 化学式: C11H17S+
• 分子量: 181.32
• InChiKey: CRGCARQLSLHZCG-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.1
• 重原子数：
  12
• 可旋转键数：
  4
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.45
• 拓扑面积：
  1
• 氢给体数：
  0
• 氢受体数：
  0

文献信息

• RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING NITROGEN-CONTAINING RING
  申请人：Nakajima Makoto

  公开号：US20120315765A1

  公开（公告）日：2012-12-13

  There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography, includes as a silane compound, a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable organosilane is a hydrolyzable organosilane of Formula (1): R 1 a R 2 b Si(R 3 ) 4−(a+b) Formula (1) wherein R 1 is Formula (2): in which R 4 is an organic group, and R 5 is a C 1-10 alkylene group, a hydroxyalkylene group, a sulfide bond, an ether bond, an ester bond, or a combination thereof, X 1 is Formula (3), Formula (4), or Formula (5): R 2 is an organic group, and R 3 is a hydrolysable group.

  提供了一种用于制备可用作硬面膜的光刻胶底层膜的抗性底层膜形成组合物。一种用于光刻胶底层膜形成的抗性底层膜形成组合物，包括硅烷化合物作为成分，所述硅烷化合物是可水解的有机硅烷、其水解产物或其水解缩合物，其中所述可水解的有机硅烷是式(1)的可水解的有机硅烷： R1aR2bSi(R3)4−(a+b) 式(1) 其中R1是式(2)： 其中R4是有机基团，R5是C1-10烷基、羟基烷基、硫化键、醚键、酯键或其组合，X1是式(3)、式(4)或式(5)： R2是有机基团，R3是可水解基团。
• SILICON-CONTAINING COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM, WHICH CONTAINS ORGANIC GROUP CONTAINING PROTECTED ALIPHATIC ALCOHOL
  申请人：Takeda Satoshi

  公开号：US20130183830A1

  公开（公告）日：2013-07-18

  Described herein are compositions for forming an underlayer film for a solvent-developable resist. These compositions can include a hydrolyzable organosilane having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof and a solvent. The composition can form a resist underlayer film including, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof, the silicon atom in the silane compound having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group in a ratio of 0.1 to 40% by mol based on the total amount of silicon atoms. Also described is a method for applying the composition onto a semiconductor substrate and baking the composition to form a resist underlayer film.

  本文描述了用于形成溶剂可开发光刻胶底层膜的组合物。这些组合物可以包括一个水解性有机硅烷，其硅原子与含有受保护脂肪醇基团的有机基团结合，水解的水解性有机硅烷的水解缩合产物，或两者的组合物和溶剂。该组合物可以形成一个光刻胶底层膜，其中包括水解性有机硅烷，水解的水解性有机硅烷的水解缩合产物，或两者的组合物，硅烷化合物中的硅原子与含有受保护脂肪醇基团的有机基团的比例为总硅原子量的0.1至40%摩尔。还描述了一种将该组合物应用于半导体衬底并烘烤该组合物以形成光刻胶底层膜的方法。
• COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM HAVING CYCLIC DIESTER GROUP
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20150322212A1

  公开（公告）日：2015-11-12

  A resist underlayer film that can be used as a hardmask. A resist underlayer film forming composition for lithography, includes: as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1) or a hydrolyzable silane containing a combination of a hydrolyzable silane of Formula (1) with a hydrolyzable silane of Formula (2) in a content of less than 50% by mole in all silanes; Formula (1): R 1 a R 2 b Si(R 3 ) 4-(a+b) wherein R 1 is an organic group containing Formula (1-1), Formula (1-2), or Formula (1-3): a is 1 and b is an integer of 0 to 2, where a+b is an integer of 1 to 3; Formula (2): R 4 a R 5 b Si(R 6 ) 4-(a+b) wherein, R 4 is an organic group containing Formula (2-1), Formula (2-2), or Formula (2-3): a is 1 and b is an integer of 0 to 2, where a+b is an integer of 1 to 3.

  一种可用作硬掩膜的抗蚀底层膜。一种用于光刻的抗蚀底层膜形成组合物，包括：作为硅烷的，一种可水解的硅烷，其水解产物或其水解-缩合产物，其中可水解的硅烷包括公式（1）的可水解硅烷或含有公式（1）的可水解硅烷与公式（2）的可水解硅烷的组合物，其在所有硅烷中的摩尔分数小于50％；公式（1）：R1aR2bSi（R3）4-（a+b），其中R1是含有公式（1-1），公式（1-2）或公式（1-3）的有机基团：a为1，b为0到2的整数，其中a+b为1到3的整数；公式（2）：R4aR5bSi（R6）4-（a+b），其中R4是含有公式（2-1），公式（2-2）或公式（2-3）的有机基团：a为1，b为0到2的整数，其中a+b为1到3的整数。
• COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM CONTAINING SILICON HAVING NITROGEN-CONTAINING RING
  申请人：Nissan Chemical Industries, Ltd.

  公开号：EP2538276A1

  公开（公告）日：2012-12-26

  There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography, comprising as a silane compound, a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable organosilane is a hydrolyzable organosilane of Formula (1):         R1aR2bSi(R3)4-(a+b)     Formula (1) wherein R1 is Formula (2): in which R4 is an organic group, and R5 is a C1-10 alkylene group, a hydroxyalkylene group, a sulfide bond, an ether bond, an ester bond, or a combination thereof, X1 is Formula (3), Formula (4), or Formula (5): R2 is an organic group, and R3 is a hydrolysable group.

  本发明提供了一种光刻用抗蚀剂底层成膜组合物，用于形成可用作硬掩膜的抗蚀剂底层膜。一种光刻用抗蚀剂底层成膜组合物，包括硅烷化合物、可水解有机硅烷、其水解产物或其水解缩合产物，其中可水解有机硅烷为式（1）的可水解有机硅烷： R1aR2bSi(R3)4-(a+b) 式(1) 其中 R1 是式 (2)： 其中 R4 是有机基团，R5 是 C1-10 烯基、羟基烷基、硫化键、醚键、酯键或它们的组合，X1 是式 (3)、式 (4) 或式 (5)： R2 是有机基团，R3 是可水解基团。
• THIN FILM FORMATION COMPOSITION FOR LITHOGRAPHY WHICH CONTAINS TITANIUM AND SILICON
  申请人：Nissan Chemical Industries, Ltd.

  公开号：EP2735904A1

  公开（公告）日：2014-05-28

  There is provided a thin film forming composition for forming resist underlayer film and the like which are used in the production of a semiconductor device, and a resist upper layer film which efficiently absorbs undesirable UV light with a thin film existing as an upper layer of the EUV resist before the undesirable UV light reaches the EUV resist layer in EUV lithography, an underlayer film (hardmask) for an EUV resist, a reverse material, and an underlayer film for a resist for solvent development. A thin film forming composition that is used together with a resist in a lithography process, comprising a mixture of a titanium compound (A) selected from a group consisting of a compound of Formula (1):         R0aTi(R1)(4-a)     Formula (1) a titanium chelate compound, and a hydrolyzable titanium dimer, and a silicon compound (B) of Formula (2):         R2a'R3bSi(R4)4-(a'+b)     Formula (2) a hydrolysis product of the mixture, or a hydrolysis-condensation product of the mixture, wherein the number of moles of a Ti atom is 50% to 90% relative to the number of total moles in terms of a Ti atom and a Si atom in the composition.

  本发明提供了一种薄膜形成组合物，用于形成半导体器件生产中使用的抗蚀剂下层膜等，以及一种抗蚀剂上层膜，该抗蚀剂上层膜在极紫外光刻中，在不希望的紫外光到达极紫外光抗蚀剂层之前，作为极紫外光抗蚀剂的上层薄膜存在，可有效吸收不希望的紫外光；一种极紫外光抗蚀剂下层膜（硬掩膜），一种反向材料，以及一种用于溶剂显影的抗蚀剂下层膜。一种在光刻工艺中与抗蚀剂一起使用的薄膜成型组合物，包括选自由式（1）化合物组成的组中的钛化合物（A）的混合物： R0aTi(R1)(4-a) 式(1) 一种钛螯合物和一种可水解的钛二聚物，以及一种式（2）的硅化合物（B）： R2a'R3bSi(R4)4-(a'+b) 式(2) 混合物的水解产物，或混合物的水解缩合产物，其中钛原子的摩尔数相对于组合物中钛原子和硅原子的总摩尔数为 50%至 90%。